Correlated Electron Material Switches via Carbon Doping
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Solution Overview
Problem
Conventional fabrication techniques are not suited for correlated electron material devices that require specific impedance switching characteristics, limiting their application in electronic switching devices.
Innovation Solution
The use of post transition metal oxides and chalcogenides with dopants, such as carbon-containing ligands, to form hybrid orbitals that reduce bandgaps and induce p-type behavior, enabling rapid conductive-to-insulative state transitions through quantum mechanical phenomena rather than solid-state structural changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional fabrication techniques are used, then manufacturing simplicity is maintained, but the desired impedance switching characteristics cannot be achieved
Solution Approach 1:
The patent applies parameter changes by doping post-transition metal oxides with carbon-containing ligands to modify the electronic structure and bandgap of the material. This chemical parameter change enables the material to exhibit Mott transition behavior with desired impedance switching characteristics that conventional materials cannot achieve
Solution Approach 2:
The patent creates a composite material system by combining post-transition metal oxides (such as Bi2O3, PbO, Tl2O3) with carbon-containing dopants. This composite approach integrates the unique electronic properties of post-transition metal oxides with the bandgap-modifying effects of carbon doping to achieve the required impedance switching performance
2Speed
If quantum mechanical phenomena are utilized for state transitions, then switching speed is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent utilizes parameter changes by precisely controlling the dopant concentration of carbon-containing ligands within specific ranges (0.1-20 atomic percent) to tune the Mott transition characteristics. This parameter optimization enables rapid switching while managing the precision requirements through defined concentration windows
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the development of correlated electron material switches that exhibit significant impedance switching with both resistive and capacitive components, enabling efficient and reversible transitions between conductive and insulative states, suitable for advanced electronic devices.
Implementation Method 1
The use of post transition metal oxides and chalcogenides with dopants, such as carbon-containing ligands, to form hybrid orbitals that reduce bandgaps and induce p-type behavior
Implementation Method 2
enabling rapid conductive-to-insulative state transitions through quantum mechanical phenomena rather than solid-state structural changes
Data Source
AI summary
Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) such as in a CEM device capable of switching between and/or among impedance states. In particular embodiments, a CEM may be formed from one or more transition metal oxides (TMOs), one or more post transition metal oxides (PTMOs) or one or more post transition metal chalcogenides (PTMCs), or a combination thereof.