Centerfind Wafer Temperature Measurement During Vacuum Transfer
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Solution Overview
Problem
Semiconductor substrates experience inconsistent temperature changes during transfer between vacuum processing chambers, leading to variability in initial temperatures and affecting the properties of deposited films, which impacts processing consistency and throughput.
Innovation Solution
A system and method using centerfind systems to determine substrate temperature changes by measuring positional metrics and radius variations, leveraging the coefficient of thermal expansion to calculate temperature fluctuations, combined with temperature sensors on robot arms for enhanced accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If substrates are transferred between vacuum processing chambers using mechanical robot arms, then substrate transport between chambers is achieved, but temperature variability occurs during transfer leading to inconsistent processing results
Solution Approach 1:
The system performs preliminary temperature measurement of substrates before they enter the processing chamber using the centerfind system's optical sensors. This allows the control system to predict temperature changes during transfer and adjust processing parameters in advance, ensuring consistent results despite temperature variability during mechanical transfer operations
2Measurement precision
If traditional temperature measurement methods are used, then direct temperature monitoring is achieved, but the complexity of the system increases and existing centerfind systems cannot be utilized
Solution Approach 1:
The invention repurposes the existing centerfind system's optical sensors and positioning capabilities to perform temperature measurement. The same optical infrastructure originally designed for substrate center detection is now used to measure substrate dimensions and calculate temperature through thermal expansion analysis, eliminating the need for separate temperature sensors and reducing system complexity
Solution Approach 2:
The system measures substrate temperature by detecting changes in substrate dimensional parameters (radius/diameter) through the centerfind optical system. By monitoring how substrate dimensions change with temperature and applying the coefficient of thermal expansion, the system converts mechanical dimension measurements into temperature data using existing optical infrastructure
3Manufacturing precision
If substrate temperature is not monitored, then system simplicity is maintained, but temperature variability affects film properties and processing quality
Solution Approach 1:
The system measures substrate temperature by detecting changes in substrate dimensional parameters (radius/diameter) through the centerfind optical system. By monitoring how substrate dimensions change with temperature and applying the coefficient of thermal expansion, the system converts mechanical dimension measurements into temperature data
Solution Approach 2:
The control system uses temperature data from the centerfind system to provide feedback for adjusting processing parameters. This feedback loop ensures that film deposition quality is maintained despite temperature variations during substrate transfer by compensating for temperature differences in real-time
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables consistent substrate processing by monitoring and controlling temperature changes, reducing inconsistencies and improving throughput by ensuring substrates are within specified temperature ranges before processing.
Implementation Method 1
determine a temperature change of the substrate based on the change in radius and a coefficient of thermal expansion of the substrate
Data Source
AI summary
Disclosed are systems and methods for measuring the temperature change of one or more substrates within a semiconductor processing system. The temperature change information may be used to optimize throughput of substrates within the system and to troubleshoot quality issues that may be impacted by temperature.