Central Injector Gas Supply for Film Thickness Uniformity
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Solution Overview
Problem
The existing film forming apparatuses for semiconductor devices suffer from uneven gas dispersion patterns, leading to insufficient gas concentration away from the injector, resulting in film thickness gradients on semiconductor wafers during the film formation process.
Innovation Solution
A film forming apparatus with a gas supply pipe connected to the central portion of an injector, which features a longitudinal design with nozzles, ensuring uniform gas distribution across the wafer by reducing the difference in gas injection between the central and end portions of the injector.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If gas is supplied to the injector from a lower end portion, then the injector structure is simple, but the gas dispersion pattern becomes uneven and film thickness gradient occurs
Solution Approach 1:
The gas supply pipe is connected to the central portion of the injector rather than uniformly along its length, creating a localized gas injection point. This local quality approach allows gas to disperse more evenly from the center outward, improving film thickness uniformity while maintaining structural simplicity
Solution Approach 2:
The gas supply connection is moved from a one-dimensional end-portion connection to a two-dimensional central connection, allowing gas to distribute in multiple directions simultaneously. This dimensional change enables more uniform gas dispersion patterns across the film formation area
2Device complexity
If gas is supplied from a single location, then the device complexity is reduced, but the gas concentration becomes insufficient away from the injector
Solution Approach 1:
The central portion of the injector acts as an intermediary medium, receiving gas from the gas supply pipe and redistributing it uniformly across the film formation area. This intermediary function ensures adequate gas concentration throughout the chamber without requiring multiple gas supply sources
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration achieves a more uniform gas dispersion and film formation, improving the average mass flux by up to 18.2% and ensuring consistent film thickness across the wafer.
Implementation Method 1
an injector disposed in the internal space of the chamber and connected to the gas supply pipe, wherein the gas supply pipe is connected to a central portion of the injector in a longitudinal direction
Data Source
AI summary
A film forming apparatus, may include: a chamber having an internal space and an exhaust port; a wafer carrier disposed in the internal space of the chamber; a gas supply pipe disposed through the chamber; and an injector disposed in the internal space of the chamber and connected to the gas supply pipe, wherein the gas supply pipe may be connected to a central portion of the injector in a longitudinal direction.