Centroid-Based Pattern Measurement for DSA Semiconductor Quality
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Solution Overview
Problem
Current technologies lack a method for accurately evaluating the self-assembled patterns formed by polymer in semiconductor manufacturing using Directed Self-Assembly (DSA), particularly in quantitatively converting these patterns into numerical values for quality assessment.
Innovation Solution
A pattern measurement device and computer program that measure dimensions, inter-centroid distances, angle information, and area details of self-assembled patterns, allowing for the identification and differentiation of patterns meeting specific conditions, enabling precise evaluation of pattern alignment and quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional exposure technologies are used to form circuit shapes, then the manufacturing process is simple, but the resolution is insufficient for sub-14nm patterns
Solution Approach 1:
The patent replaces conventional optical exposure mechanisms with a self-assembly-based formation method. Instead of using laser beams or other optical fields to directly write patterns, the invention uses molecular self-assembly processes to form patterns, thereby achieving sub-14nm resolution without requiring complex optical exposure systems.
Solution Approach 2:
The patent changes the fundamental parameter of pattern formation from optical exposure parameters (wavelength, focus, dose) to self-assembly control parameters (temperature, time, chemical conditions). This parameter transformation enables the formation of ultra-fine patterns that are unachievable with conventional optical methods.
2Manufacturing precision
If DSA method is used to form fine patterns, then the resolution is improved, but the evaluation method for pattern quality is unclear
Solution Approach 1:
The patent introduces centroid coordinates as an intermediary parameter to bridge the gap between self-assembly patterns and measurable quantities. By calculating the centroid of each pattern and measuring the distance between centroids, the invention transforms the complex self-assembly process into quantifiable metrics that can be easily measured and evaluated.
Solution Approach 2:
The patent replaces complex visual inspection methods with automated computational measurement. Instead of relying on manual or optical evaluation of pattern quality, the invention uses computer-based calculation of centroid positions and inter-centroid distances to objectively quantify pattern characteristics.
3Measurement precision
If quantitative evaluation method is developed, then the pattern quality can be assessed accurately, but the measurement process becomes complex
Solution Approach 1:
The patent extracts the essential information needed for pattern evaluation into a simple computational process. By isolating the key parameter (inter-centroid distance) from the complex self-assembly process, the invention enables accurate evaluation without requiring complex measurement equipment or procedures.
Solution Approach 2:
The patent creates a simplified mathematical model (centroid-based representation) that copies the essential features of the physical pattern. This model allows for accurate quantitative evaluation while significantly reducing the complexity of the measurement process compared to direct physical measurement of the self-assembled structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables high-accuracy quantitative evaluation of self-assembled patterns, improving the quality and yield of semiconductor devices by assessing the alignment and arrangement of polymer patterns.
Implementation Method 1
measures dimensions between patterns formed on a sample, by using data which is obtained by irradiating the sample with a beam
Data Source
AI summary
The purpose of the present invention is to provide a pattern measurement device for quantitatively evaluating a pattern formed using a directed self-assembly (DSA) method with high accuracy. The present invention is a pattern measurement device for measuring distances between patterns formed in a sample, wherein the centroids of a plurality of patterns included in an image are determined; the inter-centroid distances, and the like, of the plurality of centroids are determined; and on the basis of the inter-centroid distances, and the like, of the plurality of centroids, a pattern meeting a specific condition is distinguished from patterns different from the pattern meeting the specific condition or information is calculated about the number of the patterns meeting the specific condition, the size of an area including the patterns meeting the specific condition, and the number of imaginary lines between the patterns meeting the specific condition.