Ceramic Conductor Structure for Uniform Conductivity in Semiconductor Members
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor manufacturing apparatus members exhibit local variations in electrical conductivity, leading to inconsistent performance.
Innovation Solution
A member for a semiconductor manufacturing apparatus comprising a ceramic base material with a thermal expansion coefficient of 2.0×10−6/° C. to 10.0×10−6/° C. and a conductor with a surface layer containing spinel and a skeleton made of tungsten carbide and titanium nitride, where the spinel is positioned at the interface between the ceramic base material and the conductor to stabilize conductivity and suppress conductivity variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conductor is produced from conductive paste containing tungsten carbide and aluminum oxide, then the conductor can be formed in the ceramic base material, but local variation in electrical conductivity occurs
Solution Approach 1:
The patent changes the material composition parameters of the conductor by replacing aluminum oxide with titanium nitride, which has different electrical and thermal properties. This parameter change results in improved electrical conductivity uniformity throughout the conductor, eliminating the local variations that occurred with the original aluminum oxide-based paste.
Solution Approach 2:
The patent creates a composite conductor structure by combining tungsten carbide and titanium nitride in specific proportions. This composite material approach allows the conductor to achieve uniform electrical conductivity by leveraging the complementary properties of both materials, where tungsten carbide provides structural integrity and titanium nitride enhances electrical conductivity distribution.
2Strength
If the ceramic base material contains aluminum nitride and magnesium oxide, then the ceramic can be produced with desired thermal properties, but adhesiveness between the ceramic and conductor may be insufficient
Solution Approach 1:
The patent modifies the ceramic base material composition by adjusting the ratio of aluminum nitride to magnesium oxide and adding spinel. This compositional parameter change creates a ceramic matrix with optimized bonding characteristics that enhance the chemical and mechanical adhesion between the ceramic and the conductor, preventing delamination while maintaining thermal properties.
Solution Approach 2:
The patent creates a composite ceramic system by combining aluminum nitride, magnesium oxide, and spinel. This multi-phase composite structure provides both the desired thermal properties from aluminum nitride and improved bonding characteristics from the magnesium oxide-spinel system, achieving strong adhesiveness between the ceramic base material and the conductor.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves uniform electrical conductivity and reduces conductivity variations, ensuring consistent performance and improved adhesiveness between the ceramic base material and the conductor.
Implementation Method 1
The conductor includes a surface layer containing spinel and a skeleton positioned inside the surface layer. The spinel is positioned at the interface between the ceramic base material and the conductor to stabilize conductivity and suppress conductivity variations.
Implementation Method 2
The ceramic base material contains a ceramic material having a thermal expansion coefficient of from 2.0×10−6/° C. to 10.0×10−6/° C. This thermal expansion coefficient range is selected to match the conductor materials (tungsten carbide and titanium nitride) and prevent delamination during thermal cycling.
Implementation Method 3
The spinel is positioned at the interface between the ceramic base material and the conductor to stabilize conductivity and suppress conductivity variations. This interface structure facilitates efficient heat and electrical energy transfer between the ceramic substrate and the conductive skeleton.
Implementation Method 4
The skeleton may contain tungsten carbide and titanium nitride. These materials are selected for their high melting points, low thermal expansion, and exceptional mechanical strength, enabling the conductor to maintain its geometric stability and electrical properties under the extreme conditions of semiconductor manufacturing.
Data Source
AI summary
A member for a semiconductor manufacturing apparatus includes a ceramic base material and a conductor. The conductor is arranged in the ceramic base material. The ceramic base material contains a ceramic material having a thermal expansion coefficient of from 2.0×10−6/° C. to 10.0×10−6/° C. and spinel. The conductor includes a surface layer containing spinel and a skeleton positioned inside the surface layer.