Ceramic Dielectric Grain Boundary Engineering for Permittivity Resistivity Trade-off
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Solution Overview
Problem
Existing ceramic dielectrics in electronic components face challenges in achieving a balance between improved permittivity and resistivity, which is crucial for reducing size and enhancing performance in devices like multilayer ceramic capacitors.
Innovation Solution
A method involving the heat-treatment of barium or strontium precursors with titanium and donor elements, followed by the incorporation of a liquid-phase acceptor element precursor and sintering agent, to form a ceramic dielectric with conducting or semiconducting oxides and insulating grain boundaries, optimizing grain structure for enhanced permittivity and resistivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If conventional ceramic dielectric materials are used to improve permittivity, then the dielectric constant increases, but resistivity decreases
Solution Approach 1:
The patent applies local quality by creating distinct regions with different properties: conducting/semiconducting oxide grains for high permittivity and insulating oxide grain boundaries for high resistivity. The grain boundaries are specifically engineered with acceptor elements to provide localized insulation while maintaining overall dielectric performance.
Solution Approach 2:
The patent uses composite materials by combining conducting/semiconducting oxide grains with insulating oxide grain boundaries in a single ceramic dielectric structure. This composite approach allows simultaneous achievement of high permittivity (from conducting grains) and high resistivity (from insulating grain boundaries).
2Area of moving object
If donor element precursors are added to improve permittivity, then dielectric constant increases, but manufacturing complexity increases
Solution Approach 1:
The patent merges multiple functions into a single sintering process: heat treatment of precursors, formation of conducting oxide grains, creation of insulating grain boundaries, and densification all occur in one step. This reduces manufacturing complexity despite the sophisticated chemistry involved.
Solution Approach 2:
The patent uses parameter changes by controlling the oxidation atmosphere during sintering to transform precursor materials into the desired oxide phases with specific electrical properties. By adjusting temperature, oxygen partial pressure, and sintering time, the patent optimizes both permittivity and resistivity simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in ceramic dielectrics with improved permittivity and resistivity, enabling the development of compact, high-performance ceramic electronic components suitable for various electronic devices.
Implementation Method 1
sintering the mixture to form a ceramic dielectric
Implementation Method 2
preparing a mixture including the conducting or semiconducting oxide and a liquid-phase acceptor element precursor, and sintering the mixture
Data Source
AI summary
A method of manufacturing a ceramic dielectric, including: heat-treating a barium precursor or a strontium precursor, a titanium precursor, and a donor element precursor to obtain a conducting or semiconducting oxide, preparing a mixture including the conducting or semiconducting oxide and a liquid-phase acceptor element precursor, and sintering the mixture to form a ceramic dielectric, wherein the ceramic dielectric includes a plurality of grains and a grain boundary between adjacent grains, and wherein the plurality of grains including an insulating oxide comprising an acceptor element derived from the acceptor element precursor.