Direct-Bonded Ceramic Substrates for Low-Resistance Semiconductor Cooling

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Solution Overview

Problem

Current semiconductor device assemblies face inefficiencies in thermal dissipation due to high thermal resistance in indirect cooling configurations using thermal-interface materials and voids in direct cooling configurations, which reduce overall cooling efficiency.

Innovation Solution

Implementing a direct-bonded integration of ceramic substrates with thermal dissipation mechanisms like heat sinks or water jackets, utilizing diffusion bonding and titanium seed layers to enhance thermal conductivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If thermal-interface material is used for indirect cooling configuration, then the semiconductor device assembly can be coupled with thermal dissipation mechanism, but thermal resistance increases and cooling efficiency reduces

Engineering Contradiction:
Improvecooling efficiencyVSAvoidthermal resistance
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent removes the thermal-interface material layer from the cooling system. By directly bonding the ceramic substrate to the thermal dissipation mechanism, it extracts the harmful thermal resistance element (TIM) from the thermal path, achieving lower thermal resistance and improved cooling efficiency.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent merges the ceramic substrate and thermal dissipation mechanism into a single integrated structure through direct bonding. This eliminates the interface between separate components (substrate-TIM-thermal mechanism) and creates a unified thermal path with reduced resistance.

Inventive Principle:
Principle #5Merging (Combining)

2Reliability

If soldering or sintering material is used for direct cooling configuration, then the semiconductor device assembly can be coupled with thermal dissipation mechanism, but voids occur and thermal resistance increases

Engineering Contradiction:
Improvecooling efficiencyVSAvoidvoid formation
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent extracts the soldering or sintering material layer from the bonding interface. By using direct ceramic-to-thermal mechanism bonding without intermediate materials, it eliminates the source of void formation and the associated thermal resistance problems.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent uses a diffusion barrier layer as an intermediary between the ceramic substrate and thermal dissipation mechanism. This mediator enables direct bonding while preventing void formation, achieving both good thermal contact and manufacturing reliability.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Temperature

If direct-bonded integration is implemented, then thermal dissipation performance improves, but manufacturing complexity increases

Engineering Contradiction:
Improvethermal dissipation performanceVSAvoidintegration complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent applies a diffusion barrier layer to the ceramic substrate in advance before the bonding process. This preliminary action facilitates the direct bonding process and enables thermal dissipation performance improvement while managing manufacturing complexity through pre-preparation.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent changes the bonding parameters by using diffusion bonding at controlled temperatures and pressures. By optimizing these parameters, it achieves direct-bonded integration with improved thermal performance while keeping the manufacturing process manageable through parameter control.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Improves thermal dissipation performance by reducing junction-to-sink thermal resistance, enhancing cooling efficiency compared to existing indirect and direct cooling methods.

Implementation Method 1

utilizing diffusion bonding and titanium seed layers to enhance thermal conductivity

Methodology Applied
Scientific EffectDiffusion bonding: Diffusion Welding

Implementation Method 2

ceramic material of a second surface of the ceramic substrate can be direct-bonded to a surface of the thermal dissipation appliance

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20250349662A1Integration of semiconductor device assemblies with thermal dissipation mechanisms
Publication Date: 2025.11.13 SEMICON COMPONENTS IND LLC
  • US20250349662A1 patent drawing
  • US20250349662A1 patent drawing
  • US20250349662A1 patent drawing

AI summary

In a general aspect, an electronic device assembly can include a semiconductor device assembly including a ceramic substrate; a patterned metal layer disposed on a first surface of the ceramic substrate; and a semiconductor die disposed on the patterned metal layer. The electronic device assembly can also include a thermal dissipation appliance. Ceramic material of a second surface of the ceramic substrate can be direct-bonded to a surface of the thermal dissipation appliance. The second surface of the ceramic substrate can be opposite the first surface of the ceramic substrate.