Ceramic Gas Plug Structure for Arc-Safe Wafer Backside Flow

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Solution Overview

Problem

Existing semiconductor manufacturing apparatuses face challenges in manufacturing gas flow paths that are both designed-specific and capable of preventing arc discharge, with porous plugs either lacking stability in gas flow or experiencing insufficient flow rates due to design limitations.

Innovation Solution

A ceramic plug with intersecting linear gas flow paths and opening portions on its surfaces, allowing for precise design and manufacturing of the gas flow path, which inhibits arc discharge while ensuring a sufficient gas flow rate, even with thin paths, by using a method involving a mold created with a 3D printer and ceramic slurry injection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If a porous plug with many pores is used as gas flow paths, then the gas flow rate can be increased, but the gas flow paths cannot be manufactured in accordance with design and quality stability deteriorates

Engineering Contradiction:
Improvegas flow rateVSAvoidgas flow path design accuracy
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent uses a porous plug structure where numerous pores serve as gas flow paths. The pores are formed by dispersing spherical particles and sintering them, creating a controlled porous structure that allows gas to flow through multiple paths simultaneously, thereby increasing the gas flow rate while maintaining manufacturing precision through the standardized particle dispersion and sintering process.

Inventive Principle:
Principle #31Porous materials

2Quantity of substance

If the gas flow path thickness is increased to ensure sufficient gas flow rate, then the gas flow rate is improved, but arc discharge occurs in the gas flow path and wafer quality deteriorates

Engineering Contradiction:
Improvegas flow rateVSAvoidarc discharge
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The patent segments the gas flow path into multiple thin pathways by dispersing numerous spherical particles throughout the plug structure. Instead of having a single thick flow path, the gas flows through many thin interconnected pores formed between the particles. This segmentation allows sufficient gas flow rate through the collective effect of multiple paths while keeping each individual path thin enough to prevent arc discharge.

Inventive Principle:
Principle #1Segmentation

3Object-affected harmful factors

If the gas flow path thickness is decreased to inhibit arc discharge, then arc discharge is prevented, but the gas flow rate becomes insufficient

Engineering Contradiction:
Improvearc discharge preventionVSAvoidgas flow rate
Core Design Contradiction:
Object-affected harmful factorsVSQuantity of substance

Solution Approach 1:

The patent transitions from a single-dimension approach (one thick flow path) to a multi-dimensional network of thin flow paths by dispersing particles in three-dimensional space. The spherical particles create a complex 3D porous structure with numerous interconnected pores, effectively adding spatial dimensions to the gas flow paths. This allows the gas to flow through many thin paths simultaneously, preventing arc discharge while maintaining sufficient overall gas flow rate.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables stable and efficient gas flow paths that can be precisely designed, preventing arc discharge and ensuring a sufficient gas flow rate, thereby improving the quality of semiconductor manufacturing processes.

Implementation Method 1

an electrostatic chuck that has an upper surface that includes a wafer placement portion... a ceramic plate that attracts and holds a wafer

Methodology Applied
Scientific EffectElectrostatic attraction: Electrostatics

Implementation Method 2

helium that is a heat conduction gas is supplied to a back surface of the wafer via the porous plug in order to improve heat conduction between the wafer and the ceramic plate

Methodology Applied
Scientific EffectHeat conduction: Conduction (thermal)

Implementation Method 3

high-frequency power is applied between the cooling plate and a flat plate electrode that is disposed at an upper portion of the wafer, and the plasma is generated at the upper portion of the wafer

Methodology Applied
Scientific EffectPlasma generation: Plasma

Data Source

PatentUS20240213082A1Member for semiconductor manufacturing apparatus, plug, and method of manufacturing plug
Publication Date: 2024.06.27 NGK INSULATORS LTD
  • US20240213082A1 patent drawing
  • US20240213082A1 patent drawing
  • US20240213082A1 patent drawing

AI summary

A member for semiconductor manufacturing apparatus includes a ceramic plate that has an upper surface that includes a wafer placement portion, and a plug that is installed in a plug installation hole extending through the ceramic plate in an up-down direction and that allows gas to pass therethrough, wherein the plug has a gas flow path that includes a plurality of linear flow paths that is combined such that the plurality of linear flow paths intersects with each other in a plug body, and wherein the gas flow path includes a plurality of opening portions in an upper surface and a lower surface of the plug body.