Ceramic Heat Sink with Metal Layer for Semiconductor Cooling

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Solution Overview

Problem

Existing cooling systems for semiconductor devices are inadequate in efficiently dissipating heat while maintaining compactness and electrical insulation, especially as semiconductor devices become more performance-driven and miniaturized.

Innovation Solution

A cooling system utilizing a ceramic material-based heat sink with metal-containing layers for efficient heat dissipation and electrical insulation, incorporating ceramic structures and advanced manufacturing methods like 3D printing for enhanced thermal conductivity and compact design, along with integrated conductive paths for electromagnetic shielding and optimized thermal expansion management.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If conventional cooling systems are used for semiconductor devices, then heat dissipation is provided, but the systems are too large and do not provide sufficient electrical insulation

Engineering Contradiction:
Improvecooling system sizeVSAvoidelectrical insulation
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The heat sink uses composite material structures combining ceramic materials (for electrical insulation and thermal conductivity) with metal layers (for thermal management). This allows the cooling system to maintain electrical insulation while efficiently dissipating heat, resolving the contradiction between compact size and insulation reliability.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent changes the material parameters of the heat sink by using ceramic materials with specific thermal conductivity and electrical insulation properties. This parameter change enables the heat sink to provide both thermal management and electrical insulation functions within a compact design, addressing the contradiction between size reduction and insulation maintenance.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If semiconductor devices are miniaturized for increased performance, then device density increases, but heat dissipation becomes more difficult

Engineering Contradiction:
Improvesemiconductor device performanceVSAvoidheat dissipation efficiency
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The heat sink incorporates local quality variations through different material layers and structures optimized for specific thermal management needs. The ceramic material provides localized electrical insulation where needed, while metal layers provide thermal conduction pathways, enabling effective heat dissipation in miniaturized semiconductor devices.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The cooling system is segmented into multiple functional layers including ceramic insulation layers and metal thermal conduction layers. This segmentation allows each layer to perform its specific function optimally, with ceramic materials providing insulation and metal layers providing heat dissipation pathways, thereby solving the heat dissipation challenge in miniaturized devices.

Inventive Principle:
Principle #1Segmentation

3Reliability

If ceramic material is used for heat sink, then electrical insulation is provided, but thermal conductivity must be optimized

Engineering Contradiction:
Improveelectrical insulationVSAvoidthermal conductivity
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The heat sink employs composite material structures that combine ceramic materials (providing electrical insulation) with metal layers (providing thermal conduction). This composite approach allows the system to simultaneously achieve high electrical insulation reliability and optimized thermal conductivity, as each material contributes its superior properties to the overall structure.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively dissipates heat, maintains electrical insulation, and ensures mechanical stability, allowing for a compact and efficient cooling system that addresses the challenges of increasing semiconductor device performance and miniaturization.

Implementation Method 1

certain ceramic materials have thermal conductivities that enable efficient dissipation of heat generated by the semiconductor device

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

the heat sink also acts as an electrical insulator with respect to the semiconductor device

Methodology Applied
Scientific EffectElectrical insulation: Dielectric

Implementation Method 3

the semiconductor device being attached to the first metal-containing layer via the first contact surface by means of a first bonding layer, which is formed by soldering or sintering

Methodology Applied
Scientific EffectSoldering: Soldering

Implementation Method 4

the semiconductor device being attached to the first metal-containing layer via the first contact surface by means of a first bonding layer, which is formed by soldering or sintering

Methodology Applied
Scientific EffectSintering: Sintering

Data Source

PatentUS20220293490A1Cooling system
Publication Date: 2022.09.15 TDK ELECTRONICS AG
  • US20220293490A1 patent drawing
  • US20220293490A1 patent drawing
  • US20220293490A1 patent drawing

AI summary

A cooling system for a semiconductor device. The system includes a first heat sink containing a ceramic material as a main component and a semiconductor device having a first contact surface. The first heat sink serves for cooling the semiconductor device and as an electrical insulator with respect to the semiconductor device. Furthermore, a first metal-containing layer is provided on at least one outer surface of the first heat sink, the first metal-containing layer having a size at least equal to the area of the first contact surface of the semiconductor device. The semiconductor device is attached to the first metal-containing layer via the contact surface by a first bonding layer formed by soldering or sintering.