Ceramic Mounting Table Structure for Plasma Film Formation
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Solution Overview
Problem
Conventional plasma film forming apparatuses face challenges in maintaining a high vacuum level and high temperature due to the limitations of adhesive materials and thermally sprayed components, which affect the quality and contamination of metal films during semiconductor device manufacturing.
Innovation Solution
A mounting table structure with a ceramic mounting table, a metal flange, and a metal base with a coolant path, along with a metal seal member, is used to maintain a high vacuum level and endure high temperatures, allowing for improved film formation and degassing treatments.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If adhesive is used to attach ceramic heater to metal base, then assembly is simplified, but vacuum level deteriorates due to continuous emission of impurity gas
Solution Approach 1:
The adhesive layer is completely removed from the mounting table structure. The ceramic heater is attached to the metal base through direct contact and mechanical fastening (screws) instead of chemical bonding, eliminating the source of impurity gas emission while maintaining assembly feasibility
Solution Approach 2:
The design accepts that the ceramic heater may need periodic replacement due to thermal degradation, but eliminates the need for adhesive by using direct mechanical attachment. This approach prioritizes vacuum quality over permanent attachment methods
2Manufacturing precision
If outgassing is performed to discharge impurities, then film quality improves, but processing time increases
Solution Approach 1:
The mounting table structure is designed with inherent low-outgassing properties from the beginning by eliminating adhesive materials. The ceramic heater and metal base are directly attached, so the system requires minimal outgassing time before film formation can begin, as the contamination source is prevented rather than treated
Solution Approach 2:
The material composition of the mounting table structure is changed to use only low-outgassing materials (ceramic and metal) without organic adhesives. This parameter change in material selection fundamentally reduces the outgassing rate, allowing faster vacuum achievement and shorter processing cycles
3Manufacturing precision
If high process temperature is used for film formation, then film characteristics improve, but adhesive performance deteriorates
Solution Approach 1:
The adhesive layer is removed from the system entirely. The ceramic heater is mounted directly to the metal base using mechanical fasteners, eliminating the thermal and chemical degradation issues that would occur with adhesive exposure to high process temperatures
Solution Approach 2:
The mounting table uses a composite structure of ceramic heater directly attached to metal base, leveraging the high temperature stability of both materials without the thermal limitations of organic adhesives. This allows the system to operate at high temperatures required for quality film formation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the formation of high-quality metal films by maintaining a high vacuum level and high temperature, preventing contamination and improving the throughput of semiconductor wafer processing.
Implementation Method 1
the processing chamber can be maintained at a high vacuum level by sufficiently performing a degassing treatment
Implementation Method 2
a ceramic mounting table in which a chuck electrode and a heater are embedded
Implementation Method 3
a metal base which is joined to the flange by screws and has a coolant path for flowing a coolant therein
Implementation Method 4
metal ions generated from a metal target by a plasma are attracted to the mounting table by a high frequency bias power to form, e.g., a metal thin film on the semiconductor wafer
Implementation Method 5
a thin film containing metal such as Cu, Ti, Ta or the like is generally formed by using a plasma sputtering method
Implementation Method 6
The semiconductor wafer is attracted and held on the mounting table by an electrostatic force generated by a high voltage applied to the chuck electrode
Data Source
AI summary
A mounting table structure for mounting thereon an object to be processed to form a metal-containing thin film on the object includes a ceramic mounting table in which a chuck electrode and a heater are embedded, and a metal flange connected to a bottom surface of a peripheral portion of the mounting table. The mounting table structure further includes a metal base which is joined to the flange by screws and has a coolant path for flowing a coolant therein, and a metal seal member interposed between the flange and the base.