Ceramic Power Module Layout for Two-Way Heat Dissipation

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Solution Overview

Problem

Conventional power transistor modules face challenges with heat dissipation, complex manufacturing processes, and reduced productivity due to the need for multiple lead frames and limited thermal conductivity, which affects the performance and service life of high-power electric vehicle motors and 5G communication devices.

Innovation Solution

A heat-electricity discrete power module utilizing two-way heat-dissipation ceramic substrates with metallic layers for thermal and electrical conductivity, eliminating the need for holes in the ceramic substrates and enabling efficient heat dissipation through multi-tier three-dimensional conductive layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If conventional power transistor modules use traditional lead frames with holes in ceramic substrates for heat dissipation, then heat dissipation is achieved, but the manufacturing process becomes complex and productivity decreases

Engineering Contradiction:
Improveheat dissipation efficiencyVSAvoidmanufacturing productivity
Core Design Contradiction:
TemperatureVSProductivity

Solution Approach 1:

The invention extracts and eliminates the holes from the ceramic substrates, replacing the conventional lead frame structure with a solid ceramic substrate that has metal cladding layers for heat dissipation. This removal of holes simplifies the manufacturing process by eliminating the need for hole formation, cleaning, and sealing operations, thereby improving productivity while maintaining effective heat dissipation through the solid ceramic and metal cladding structure.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The invention employs composite materials by combining ceramic substrates with metal cladding layers (such as copper or aluminum) to achieve effective heat dissipation. The ceramic provides electrical insulation and structural stability, while the metal cladding layers provide high thermal conductivity pathways for heat removal, creating a composite structure that optimizes both thermal management and manufacturing simplicity.

Inventive Principle:
Principle #40Composite materials

2Temperature

If multiple three-dimensional lead frames are used for mounting power transistor dies, then heat dissipation is improved, but the manufacturing process complexity increases and alignment precision becomes difficult to ensure

Engineering Contradiction:
Improveheat dissipation capabilityVSAvoidalignment precision
Core Design Contradiction:
TemperatureVSManufacturing precision

Solution Approach 1:

The invention merges multiple lead frame functions into a single integrated ceramic substrate structure with metal cladding layers. Instead of using separate three-dimensional lead frames that require precise alignment and mounting, the ceramic substrate with its metal cladding provides a unified platform for mounting power transistor dies and dissipating heat, eliminating alignment issues between multiple components and simplifying the manufacturing process.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The invention transitions from a three-dimensional lead frame structure requiring vertical stacking and alignment to a planar ceramic substrate with metal cladding layers. The heat dissipation function is achieved through the metal cladding layers on the ceramic substrate surface, eliminating the need for complex three-dimensional lead frame assembly and ensuring precise thermal contact with the power transistor dies through direct bonding to the ceramic substrate.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Temperature

If discrete gate driver is used to enable thermal isolation, then thermal management is improved, but circuit complexity increases and signal transmission accuracy decreases

Engineering Contradiction:
Improvethermal isolationVSAvoidcircuit complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The invention segments the ceramic substrate into functionally distinct regions: a first region for mounting the power transistor die with direct thermal contact through metal cladding, and a second region for mounting the gate driver with thermal isolation. This segmentation allows the gate driver to be thermally isolated from the high-power transistor while maintaining electrical connectivity through the ceramic substrate, reducing circuit complexity and improving signal transmission accuracy by eliminating the need for separate discrete gate driver packaging.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution achieves sound heat dissipation efficiency, simplifies the manufacturing process, improves productivity and yield, and extends the service life of power transistor dies and other circuit components by effectively managing thermal stress and heat accumulation.

Implementation Method 1

heat is conducted via the metallic layers cladded to the outer sides of the ceramic insulation layers

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20250132233A1Heat-Electricity Discrete Power Module Including Two-Way Heat-Dissipation Ceramic Substrates and Manufacturing method of the Same
Publication Date: 2025.04.24 ICP TECH CO LTD
  • US20250132233A1 patent drawing
  • US20250132233A1 patent drawing
  • US20250132233A1 patent drawing

AI summary

Disclosed are a heat-electricity discrete power module with two-way heat-dissipation ceramic substrates and a manufacturing method of the same, including: two double-sided metal-clad ceramic substrates, a power transistor die, and an insulation sealant; each double-sided metal-clad ceramic substrate including a ceramic insulation layer, a three-dimensional conductive layer formed on the first ceramic insulation layer and facing the opposite three-dimensional conductive layer to constitute an electrical circuit, and a thermally-conductive metallic layer opposite and insulated from the three-dimensional conductive layer, respectively; electrodes of each power transistor die are electrically conductively connected to the three-dimensional conductive layer, and their upper and lower surfaces are thermally conductively connected to respective three-dimensional conductive layers; circuit components are additionally mounted on the three-dimensional conductive layers; at least one conductive post is formed between the circuits of respective three-dimensional conductive layers; the power transistor die and conductive post are completely encapsulated by the insulation sealant.