Ceramic RF Return Kit for Cleaner, More Uniform Wafer Processing
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Solution Overview
Problem
Temperature non-uniformity and contamination issues in semiconductor processing due to faceplate sublimation and stainless steel component corrosion, leading to inconsistent substrates and potential contamination.
Innovation Solution
The semiconductor processing system incorporates a thermal choke plate that introduces purge gas into the reaction volume, reducing pressure deltas and purge gas volume requirements, while using ceramic materials and minimizing stainless steel exposure to prevent contamination and sublimation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional substrate processing system designs are used with faceplate purging, then the system structure is simple, but the purge flow rate is insufficient to prevent faceplate sublimation and temperature non-uniformity
Solution Approach 1:
The faceplate purging system is segmented into multiple independent purge regions, each with its own purge gas inlet and flow control. This allows targeted purging of specific high-risk areas where sublimation is most likely to occur, improving temperature uniformity without requiring excessively high overall purge flow rates
Solution Approach 2:
Different regions of the faceplate are provided with different purge gas flow rates based on their specific thermal and chemical conditions. Areas more prone to sublimation receive higher localized purge flows, while other regions receive lower flows, optimizing both temperature uniformity and purge gas efficiency
2Reliability
If stainless steel components are used in the substrate processing environment, then the device complexity is reduced, but the components react with purge gases to form metal contaminants that invade substrates
Solution Approach 1:
A protective coating layer is applied to stainless steel components to act as an intermediary barrier between the metal and the purge gases. This coating prevents direct chemical reaction between the stainless steel and reactive purge gases, eliminating metal contaminant formation while allowing the use of stainless steel structural components
Solution Approach 2:
The system uses composite material structures combining stainless steel substrate with protective coating layers. This composite approach maintains the mechanical strength and structural integrity of stainless steel components while the coating layer provides chemical inertness against purge gases, ensuring substrate purity without excessive device complexity
3Reliability
If coatings are applied to stainless steel components to prevent reaction with purge gases, then the protective effect is provided at lower temperatures, but at high temperatures (400°C or higher) the coating flakes off and leaves stainless steel exposed for oxidation and corrosion
Solution Approach 1:
The protective coating is designed with specific thermal and chemical parameters optimized for high-temperature environments. The coating material selection and application parameters are adjusted to ensure thermal stability and adhesion at temperatures of 400°C and higher, preventing flaking and maintaining protection against oxidation and corrosion throughout the substrate processing temperature range
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces temperature non-uniformity, prevents faceplate sublimation, and minimizes contamination risks, resulting in more consistent and high-quality semiconductor substrates.
Implementation Method 1
The thermal choke plate may define a purge inlet, a purge channel, and a number of purge outlets that deliver a purge gas to an interior of the chamber body
Implementation Method 2
The shaft may include a cooling hub that extends through the bottom plate... Each of the inner isolator and the outer isolator may include a ceramic material
Implementation Method 3
The bellow may expand and contract as the substrate support is translated within the chamber
Data Source
AI summary
Exemplary semiconductor processing systems may include a chamber body having a bottom plate. The systems may include a substrate support disposed within the chamber body. The substrate support may include a support plate and a shaft. The shaft may include a cooling hub that extends through the bottom plate. The shaft may include a ground shaft that is seated atop the cooling hub. The ground shaft may include a ceramic material. The systems may include an inner isolator coupled with a bottom of the support plate. The inner isolator may define an aperture therethrough that receives the shaft. The systems may include an outer isolator that is seated atop the inner isolator. Each of the inner isolator and the outer isolator may include a ceramic material.