Sintered Ceramic Power Semiconductor Housing for 400°C Operation
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Solution Overview
Problem
Conventional power semiconductor component housings are limited by high production costs, poor thermal conductivity, corrosion resistance, and thermal expansion mismatch, which restrict their operation to temperatures below 175°C and switching voltages below 1.7 kV, making them unsuitable for high-temperature and high-voltage applications.
Innovation Solution
A method involving a sintering process that converts layer-shaped unsintered ceramic substrates into a sintered ceramic single or multilayer substrate, simultaneously forming an electrical and mechanical connection with the semiconductor component and its contacting elements, allowing for high-temperature operation and hermetic encapsulation, thereby reducing manufacturing complexity and costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional housing materials and connection technology are used, then manufacturing is simpler, but the component can only operate at temperatures up to 175°C with poor thermal conductivity and corrosion resistance
Solution Approach 1:
The patent combines multiple functions into a single integrated ceramic housing structure that simultaneously provides thermal management, electrical insulation, mechanical protection, and hermetic sealing. The ceramic substrate integrates the housing walls, cooling channels, and electrical insulation features, eliminating the need for separate components and complex assembly processes.
Solution Approach 2:
The patent employs advanced ceramic materials with composite structures that provide high temperature resistance, excellent thermal conductivity, and superior corrosion resistance. The ceramic composition is specifically designed to withstand temperatures above 175°C while maintaining structural integrity and providing effective heat dissipation pathways.
2Temperature
If conventional structural design is used, then manufacturing is easier, but thermal expansion mismatch makes high-temperature operation impossible
Solution Approach 1:
The patent uses a monolithic ceramic structure with uniform material composition throughout, ensuring consistent thermal expansion characteristics. This homogeneity eliminates thermal expansion mismatch issues that arise from joining dissimilar materials with different expansion coefficients, allowing the structure to withstand high temperature cycles without degradation.
3Reliability
If conventional connection technology is used, then manufacturing is simpler, but hermetic sealing and electrical insulation at high temperatures cannot be achieved
Solution Approach 1:
The patent integrates hermetic sealing and electrical insulation functions directly into the ceramic housing structure. The ceramic material itself provides both electrical insulation and hermetic sealing, eliminating the need for separate gaskets, adhesives, or coating layers that would be required with conventional materials.
4Power
If SiC semiconductor components are used, then power density and switching speed increase, but component cost increases three times
Solution Approach 1:
The patent converts the high cost of SiC components into a benefit by designing a housing and cooling system that fully exploits SiC's high temperature capabilities. The advanced ceramic housing enables operation at temperatures where SiC outperforms silicon, maximizing the value of the expensive semiconductor and reducing the need for additional cooling infrastructure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables reliable operation at temperatures above 400°C and switching voltages up to 6.5 kV with reduced parasitic inductances and enhanced long-term stability, while minimizing manufacturing costs and switching losses.
Implementation Method 1
The arrangement is subjected to a sintering process in which the plurality of layer-shaped unsintered ceramic substrates are converted into a sintered ceramic single layer or multilayer substrate
Implementation Method 2
simultaneously an electrical connection of the at least one semiconductor component to the at least one element for the electrical contacting of the at least one semiconductor component takes place
Implementation Method 3
The ceramic single layer or multilayer substrate or the ceramic single layer or multilayer interconnect device is characterized in that the ceramic single layer or multilayer substrate or the ceramic single layer or multilayer interconnect device enables a reliable operation at temperatures above 400° C.
Implementation Method 4
allowing for high-temperature operation and hermetic encapsulation
Data Source
AI summary
Disclosed is a method of manufacturing a power semiconductor component arrangement or a power semiconductor component housing. The method involves a sintering process in which the plurality of layer-shaped unsintered ceramic substrates are converted into a sintered ceramic single layer or multilayer substrate or into a sintered ceramic single layer or multilayer interconnect device. Also disclosed is a power semiconductor component arrangement or a power semiconductor component housing that can be manufactured using the above method. Further disclosed are the uses of the power semiconductor component arrangement or the power semiconductor component housing.