Ceramic Substrate Bonding Structure for Large Hole Elimination
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Solution Overview
Problem
Ceramic substrates used in high-frequency and high-power semiconductor devices often have surface holes and pores larger than 10 μm, which cannot be filled by conventional deposition processes, leading to defects and cracks in stack layers.
Innovation Solution
A semiconductor structure comprising a ceramic substrate with a first bonding layer filling the holes, a second bonding layer, and a semiconductor layer, where the first and second bonding layers enclose cavities over the holes, allowing the semiconductor layer to extend across the substrate surface without cracking through a wafer bonding process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a filling layer is formed on the surface of the ceramic substrate to eliminate holes, then holes with smaller diameter (≤10 μm) can be eliminated, but holes with larger diameter (>10 μm) would still not be eliminated
Solution Approach 1:
The patent divides the hole filling process into two stages: first forming a filling layer to fill small holes (≤10 μm), then performing a wafer bonding process to fill remaining larger holes (>10 μm). This segmentation allows each process to target specific hole size ranges, achieving complete hole elimination without requiring a single complex process to handle all sizes.
Solution Approach 2:
The filling layer is formed as a preliminary action before the wafer bonding process. This preliminary filling of smaller holes reduces the burden on the subsequent bonding process, which then focuses on filling the remaining larger holes. This preliminary action optimizes the overall manufacturing efficiency.
2Ease of manufacture
If conventional deposition processes are used to fill holes on ceramic substrates, then the process is simple, but holes larger than 10 μm cannot be eliminated
Solution Approach 1:
The patent merges two different processes: the conventional deposition process for forming the filling layer and the wafer bonding process. By combining these processes, the method achieves both the simplicity of conventional deposition and the effectiveness of wafer bonding in eliminating holes of all sizes, including those larger than 10 μm.
Solution Approach 2:
The filling layer acts as an intermediary between the ceramic substrate and the semiconductor layer. It first fills smaller holes through deposition, then the wafer bonding process fills the remaining larger holes. This intermediary structure enables a stepwise approach to hole elimination that maintains process simplicity while achieving complete filling.
3Productivity
If holes on the ceramic substrate surface are not filled, then the manufacturing process remains simple, but cracks or defects occur in the stack layers above the ceramic substrate
Solution Approach 1:
The filling layer and wafer bonding process are performed as preliminary actions before stacking the semiconductor layers. This ensures that all holes are eliminated before the semiconductor layers are placed on the ceramic substrate, preventing cracks or defects in the stack layers while maintaining manufacturing efficiency through a streamlined process sequence.
Solution Approach 2:
The filling layer serves as a cushioning layer that prevents potential cracks or defects in the stack layers above. By filling the holes beforehand, especially the larger holes that would otherwise cause significant stress concentration, the structure is reinforced to prevent future failures during device operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the complete transfer and extension of the semiconductor layer across the ceramic substrate surface, eliminating defects and ensuring a flat surface for further stack layers, thereby improving the reliability and integrity of semiconductor devices.
Implementation Method 1
Bonding the first wafer structure and the second wafer structure so that the first bonding layer and the second bonding layer enclose a cavity
Data Source
AI summary
A semiconductor structure includes a ceramic substrate, a first bonding layer, a second bonding layer, a cavity, and a semiconductor layer. The ceramic substrate includes holes on its surface. The first bonding layer is disposed on the surface of the ceramic substrate, and the second bonding layer is bonded to the first bonding layer. The cavity is disposed above the hole and enclosed by the first bonding layer and the second bonding layer. The semiconductor layer extends over the cavity and is disposed along the surface of the second bonding layer.