Ceramic-Layer Through-Hole Structure for Low-Particle Plasma Processing
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Solution Overview
Problem
The production of particles from semiconductor manufacturing apparatus members during plasma processing reduces the yield and quality of semiconductor devices, particularly due to particle formation from holes in these members.
Innovation Solution
A semiconductor manufacturing apparatus member with a composite structure comprising a base material and a ceramic layer, featuring through-holes with varying hardness regions, including a third hole region with increased hardness to mitigate damage and particle production during maintenance and plasma exposure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a semiconductor manufacturing apparatus member includes holes for plasma processing, then plasma processing functionality is improved, but particle production increases due to damage and corrosion at the hole regions
Solution Approach 1:
The patent applies local quality by creating distinct hardness regions within the hole structure. The third hole region has increased hardness compared to the first hole region, allowing different parts of the same component to have different mechanical properties. This localized hardness enhancement specifically protects the most vulnerable areas (hole regions exposed to plasma and maintenance activities) without compromising the overall functionality of the apparatus member.
Solution Approach 2:
The patent employs composite materials by combining base material with a ceramic layer to form a composite structure. This composite construction provides both the structural integrity needed for plasma processing and enhanced resistance to particle generation. The ceramic layer specifically protects the hole regions from plasma-induced damage and corrosion, reducing particle production while maintaining processing functionality.
2Ease of repair
If the hole regions are made softer for ease of maintenance, then ease of repair is improved, but damage and particle production increase during handling
Solution Approach 1:
The patent applies local quality by creating distinct hardness regions within the hole structure. The third hole region has increased hardness compared to the first hole region, allowing different parts of the same component to have different mechanical properties. This localized hardness enhancement specifically protects the most vulnerable areas (hole regions exposed to plasma and maintenance activities) without compromising the overall functionality of the apparatus member.
3Reliability
If the ceramic layer is made thicker for better plasma resistance, then plasma resistance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies local quality by creating distinct hardness regions within the hole structure. The third hole region has increased hardness compared to the first hole region, allowing different parts of the same component to have different mechanical properties. This localized hardness enhancement specifically protects the most vulnerable areas (hole regions exposed to plasma and maintenance activities) without compromising the overall functionality of the apparatus member.
Solution Approach 2:
The patent applies partial action by enhancing hardness specifically in the third hole region rather than uniformly throughout the entire component. This targeted approach provides sufficient plasma resistance and particle reduction where most needed (at the hole regions) without the excessive complexity and cost of making the entire apparatus member harder or more complex.
Data Source
AI summary
According to one embodiment, a semiconductor manufacturing apparatus member is used inside a chamber of a semiconductor manufacturing apparatus. The member includes a composite structure. The composite structure includes a base material and a ceramic layer. The ceramic layer includes a first part located on a surface of the base material and is exposed. The composite structure includes a through-hole extending through the base material and the ceramic layer. The through-hole extends in a first direction. The through-hole includes a first hole region, a second hole region and a third hole region. The first hole region is continuous with a surface of the first part. The third hole region is positioned between the first hole region and the second hole region in the first direction. A hardness of the third hole region is greater than a hardness of the first hole region.