Ceramic Wafer Table Bonding Structure for Plasma and Thermal Balance
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Solution Overview
Problem
Existing semiconductor manufacturing apparatus face issues with maintaining high corrosion resistance, preventing excessive wafer cooling, and ensuring efficient plasma generation without wasteful electricity consumption.
Innovation Solution
A member for semiconductor manufacturing apparatus is designed with a ceramic plate and cooling plate bonded by metal bonding layers, where the first bonding layer acts as an RF electrode and the second bonding layer has higher corrosion resistance, and the ceramic plate thickness is optimized to prevent excessive cooling and maintain plasma efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal bonding layer is used to bond the ceramic plate and cooling plate, then corrosion resistance is improved, but thermal conductivity increases causing excessive wafer cooling
Solution Approach 1:
The bonding structure is segmented into three distinct layers: a first metal bonding layer (high thermal conductivity) for bonding the ceramic plate to the intermediate ceramic plate, a second ceramic plate layer (low thermal conductivity) as a thermal insulation barrier, and a second metal bonding layer (high thermal conductivity) for bonding the intermediate ceramic plate to the cooling plate. This segmentation allows the system to achieve both high corrosion resistance through metal bonding and prevent excessive wafer cooling by inserting the low thermal conductivity ceramic plate between the metal bonding layers.
2Temperature
If the thickness of the ceramic plate is increased to prevent excessive cooling, then wafer temperature control is improved, but plasma generation efficiency decreases
Solution Approach 1:
Instead of increasing the thickness of a single ceramic plate, the thermal insulation function is segmented and achieved through the second ceramic plate layer positioned between the two metal bonding layers. This allows the actual ceramic plate (first ceramic plate) to maintain its original thin thickness for optimal plasma generation efficiency, while the intermediate ceramic plate provides the necessary thermal insulation to prevent excessive wafer cooling.
3Productivity
If a single ceramic plate structure is used, then plasma generation efficiency is maintained, but corrosion resistance decreases when using resin bonding
Solution Approach 1:
The bonding system is segmented into multiple functional layers that work together: metal bonding layers provide high corrosion resistance where needed (at the interfaces with the cooling plate and between ceramic components), while the thin first ceramic plate maintains plasma generation efficiency. The intermediate ceramic plate segment provides thermal insulation without compromising the overall structural integrity or corrosion resistance.
Solution Approach 2:
The bonding structure employs a composite arrangement combining metal materials (for bonding and corrosion resistance) with ceramic materials (for thermal insulation and electrical insulation). This composite structure leverages the advantageous properties of both material types: the metal bonding layers provide superior corrosion resistance compared to resin, while the ceramic intermediate plate provides thermal insulation, and the thin ceramic plate maintains plasma generation efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves high corrosion resistance, prevents excessive wafer cooling without electricity wastage, and ensures efficient plasma generation by optimizing the thickness and material properties of the bonding layers.
Implementation Method 1
a first bonding layer made of metal, which is used as an RF electrode and configured to bond the lower surface of the first ceramic plate and an upper surface of the second ceramic plate together
Implementation Method 2
a first bonding layer made of metal, which is used as an RF electrode and configured to bond the lower surface of the first ceramic plate and an upper surface of the second ceramic plate together
Data Source
AI summary
A member for semiconductor manufacturing apparatus includes a first ceramic plate having a wafer placement surface on its upper surface and a built-in electrode; a second ceramic plate disposed on a lower surface side of the first ceramic plate; a cooling plate disposed on a lower surface side of the second ceramic plate; a first bonding layer made of metal, which is used as an RF electrode and configured to bond the lower surface of the first ceramic plate and an upper surface of the second ceramic plate together; and a second bonding layer made of metal or inorganic composition configured to bond the lower surface of the second ceramic plate and an upper surface of the cooling plate together.