Ceria-Copper Buffer Layer for HTSC Texture Transfer

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Solution Overview

Problem

Current high-temperature superconductor layer arrangements face challenges in achieving dense, homogeneous, and crack-free layers with high texture transfer and diffusion barrier properties, particularly when using multi-component buffer layers, which complicates the manufacturing process and reduces production speed.

Innovation Solution

Incorporating a transition metal like copper or silver in the buffer layer to form a homogeneous mixed crystal phase, allowing for partial melting and recrystallization, which enhances texture transfer and results in a dense, smooth, and crack-free HTSC layer, produced via chemical solution coating.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If multiple buffer layer materials are used to meet high texture transfer and diffusion barrier requirements, then the quality of HTSC layer is improved, but the process complexity increases and production speed decreases

Engineering Contradiction:
Improvetexture transfer qualityVSAvoidbuffer layer structure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent combines multiple buffer layer materials (ceria and copper) into a single integrated buffer layer structure. This merging approach maintains the texture transfer quality and diffusion barrier properties of conventional multi-layer buffers while simplifying the overall structure to a single layer, thereby reducing process complexity and enabling faster production.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent employs a composite buffer layer material consisting of ceria and copper in specific ratios (30-70 at.% ceria, 70-30 at.% copper). This composite material integrates the beneficial properties of both components: ceria provides diffusion barrier properties and texture transfer capability, while copper enhances sintering behavior and densification. The composite nature allows achieving high-quality HTSC layers with simplified single-layer buffer structure.

Inventive Principle:
Principle #40Composite materials

2Productivity

If conventional single-layer buffer materials are used, then the production process is simplified and production speed increases, but the texture transfer and diffusion barrier properties are insufficient

Engineering Contradiction:
Improveproduction speedVSAvoiddiffusion barrier performance
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent uses a composite buffer layer material combining ceria and copper that provides both excellent diffusion barrier properties and texture transfer capability in a single layer. This composite approach maintains the simplified single-layer structure for high production speed while ensuring reliable diffusion barrier performance through the synergistic properties of the composite materials.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent optimizes the compositional parameters of the buffer layer by controlling the ratio of ceria to copper (30-70 at.% ceria). This parameter optimization ensures that the single-layer buffer provides sufficient diffusion barrier performance and texture transfer capability, meeting reliability requirements while maintaining production efficiency.

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If chemical solution coating is used to produce buffer and HTSC layers, then process simplicity and production speed are improved, but control over layer formation kinetics and crystallization is more difficult

Engineering Contradiction:
Improveprocess simplicityVSAvoidlayer homogeneity and texture
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The composite ceria-copper buffer layer material facilitates controlled crystallization and homogeneous layer formation during chemical solution coating. The copper component enhances sintering behavior and promotes uniform densification, while ceria provides structural stability. This composite composition enables achieving homogeneous, crack-free HTSC layers with good texture through the simplified chemical solution coating process.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent utilizes phase transition phenomena during the thermal processing of the chemical solution-coated buffer layer. The controlled heating process induces crystallization of the ceria-copper composite and subsequent HTSC phase formation. The copper component facilitates lower-temperature sintering and more uniform phase transformation, improving layer homogeneity and reducing defects while maintaining process simplicity.

Inventive Principle:
Principle #36Phase transitions

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The approach leads to improved physical and mechanical properties of the HTSC layer, including increased critical current density and reduced porosity and microcracks, enabling the production of high-quality, superconducting components with enhanced superconducting properties.

Implementation Method 1

the further component forming a homogeneous mixed crystal phase with the buffer layer material, which forms at least a partial melt with an annealing treatment of ≤ 1 600 °C

Methodology Applied
Scientific EffectPartial melting: Melting

Implementation Method 2

at least a partial melt can form when the buffer layer is produced, so that at least partial recrystallization of the buffer layer material can take place during the subsequent annealing treatment

Methodology Applied
Scientific EffectRecrystallization: Crystallisation

Implementation Method 3

this should transfer the texture of the textured carrier material, which has the highest possible degree of texture, as completely and perfectly as possible to the HTSL layer to be grown

Methodology Applied
Scientific EffectTexture transfer: Epitaxy

Data Source

PatentEP2272112B1High-temperature superconductive layer arrangement
Publication Date: 2016.06.15 BASF SE

AI summary

The invention relates to a high-temperature superconductive layer arrangement, comprising a carrier material and a texturized buffer layer made of oxidic material. According to the invention, the buffer layer comprises at least one further constituent forming a homogeneous mixed crystal phase, said constituent being a transition metal from the first subgroup and/or forming at least a partial melt with the oxidic buffer material at an annealing temperature of ≤ 1,600 degrees Celsius. The further constituent may in particular be copper and/or silver.