Cerium Abrasive Grain Selection for Higher Silicon Oxide CMP Rate
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing polishing liquids containing abrasive grains struggle to adjust the polishing rate of materials, particularly in pattern regions with linear silicon nitride and silicon oxide patterns, necessitating a method to enhance the polishing rate of silicon oxide in specific patterns.
Innovation Solution
Selecting a raw material for abrasive grains based on the peak top temperature in a thermogravimetric curve, using cerium compounds like cerium oxide derived from cerium complexes, and producing abrasive grains through pulverization to create a polishing liquid that increases the polishing rate of silicon oxide in pattern regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional polishing liquids containing cerium abrasive grains are used, then general polishing can be performed, but the polishing rate of silicon oxide in pattern regions cannot be sufficiently increased
Solution Approach 1:
The invention changes the chemical composition parameters of the polishing liquid by incorporating specific organic acids (oxalic acid, malonic acid, succinic acid, or fumaric acid) and controlling the cerium oxide particle characteristics. This parameter change enables the polishing liquid to achieve both high polishing rate in pattern regions and adaptability to different polishing applications through the synergistic effect of organic acids and cerium oxide particles.
Solution Approach 2:
The invention creates a composite polishing liquid system combining cerium oxide abrasive grains with specific organic acids. This composite material approach allows the polishing liquid to exhibit enhanced properties where the organic acids modify the chemical environment to increase silicon oxide removal rate in pattern regions while maintaining versatility for different polishing applications.
2Productivity
If the polishing rate is increased for silicon oxide, then pattern region polishing efficiency improves, but control over polishing rate adjustment becomes difficult
Solution Approach 1:
The invention provides specific parameter ranges for organic acid content (0.01-10 wt%) and cerium oxide particle characteristics to achieve high silicon oxide polishing rate while maintaining controllability. By defining these parameters, the polishing rate can be adjusted predictably for different applications without losing control over the polishing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method allows for a high polishing rate of silicon oxide in pattern regions with linear silicon nitride and silicon oxide patterns, achieving rates of 13 nm/min or more, addressing the challenge of adjusting polishing rates effectively.
Implementation Method 1
a peak top temperature in a differential curve of a thermogravimetric curve obtained by thermogravimetric analysis of the raw material
Implementation Method 2
CMP (chemical mechanical polishing) technology
Implementation Method 3
CMP (chemical mechanical polishing) technology
Data Source
AI summary
A selection method for a raw material for obtaining abrasive grains, in which the raw material contains cerium, and the raw material is selected on the basis of a peak top temperature in a differential curve of a thermogravimetric curve obtained by thermogravimetric analysis of the raw material. A raw material for obtaining abrasive grains, the raw material containing cerium, in which a peak top temperature in a differential curve of a thermogravimetric curve obtained by thermogravimetric analysis of the raw material is 300° C. or higher. A method for producing abrasive grains, including pulverizing the above-described raw material. A method for producing a polishing liquid, including mixing the abrasive grains obtained by the above-described method for producing abrasive grains, and water. A polishing method, including polishing a member to be polished by using the polishing liquid obtained by the above-described method for producing a polishing liquid.