Cerium Oxide Abrasive Selection for Patterned Oxide Polishing
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Solution Overview
Problem
Existing polishing liquids containing abrasive grains struggle to adjust the polishing rate of materials, particularly in pattern regions with linear silicon nitride and silicon oxide patterns, necessitating a method to enhance the polishing rate of silicon oxide in specific patterns.
Innovation Solution
The selection of abrasive grains based on a short-life component value of positron lifetime using a positron annihilation method, specifically utilizing cerium oxide derived from cerium complexes like trimesic acid, to create a polishing liquid that can adjust and increase the polishing rate of silicon oxide in patterned wafers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional polishing liquids containing abrasive grains are used, then polishing can be performed, but the polishing rate of silicon oxide in pattern regions cannot be sufficiently increased
Solution Approach 1:
The invention changes the chemical composition parameters of the polishing liquid by incorporating specific organic acids (trimesic acid, terephthalic acid, or phthalic acid) and controlling the Ce/Si atomic ratio within 0.01-1.0, thereby achieving enhanced polishing rate of silicon oxide in pattern regions while maintaining adjustability for different applications
Solution Approach 2:
The invention creates a composite polishing liquid system combining cerium-containing abrasive grains with specific organic acids in defined concentration ranges, where the synergistic interaction between components achieves both high polishing rate and application-specific adjustability that neither component could achieve alone
2Productivity
If the polishing rate of silicon oxide is increased in pattern regions, then manufacturing efficiency improves, but control over polishing uniformity becomes more difficult
Solution Approach 1:
The invention optimizes multiple parameters simultaneously: organic acid concentration (0.01-10 wt%), Ce/Si atomic ratio (0.01-1.0), and abrasive grain concentration (0.1-10 wt%), creating a balanced formulation that achieves high polishing rate in pattern regions while maintaining overall polishing uniformity through controlled chemical-mechanical interaction
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables a high polishing rate of silicon oxide in pattern regions with linear silicon nitride/silicon oxide patterns, achieving rates of 13 nm/min or more, thereby improving the manufacturing process for semiconductor components.
Implementation Method 1
a short-life component value of a positron lifetime as measured by a positron annihilation method
Data Source
AI summary
A selection method for abrasive grains, in which the abrasive grains contain cerium, and the abrasive grains are selected on the basis of a short-life component value of a positron lifetime as measured by a positron annihilation method. Abrasive grains containing cerium, in which a short-life component value of a positron lifetime as measured by a positron annihilation method is 190 ps or less. A polishing liquid containing the above-described abrasive grains and water. A multi-pack polishing liquid having a first liquid containing the above-described abrasive grains and water, and a second liquid containing a component other than the above-described abrasive grains and water, and water. A polishing method including polishing a member to be polished by using the above-described polishing liquid.