Cerium Oxide Abrasive Grain Selection for Higher Silicon Oxide CMP Rate
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing polishing liquids containing abrasive grains struggle to adjust the polishing rate of materials effectively, particularly for silicon oxide in blanket wafers, necessitating a novel method to enhance polishing efficiency.
Innovation Solution
A selection method for raw materials based on positron lifetime measurement is used to produce abrasive grains, specifically cerium oxide derived from cerium oxycarbonate or cerium carbonate, which are then pulverized and mixed with water to create a polishing liquid, enabling precise control of polishing rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional polishing liquids are used, then polishing can be performed, but the polishing rate of silicon oxide cannot be sufficiently increased
Solution Approach 1:
The invention changes the chemical composition parameters of the polishing liquid by specifying precise concentrations of cerium oxide (0.01-10 wt%), ammonium dihydrogen phosphate (0.001-1 wt%), and hydrogen peroxide (0.01-1 wt%). These parameter adjustments enable simultaneous achievement of high polishing rate (50 nm/min or more) and consistent polishing performance.
Solution Approach 2:
The invention uses a composite polishing liquid formulation combining cerium oxide abrasive grains with chemical agents (ammonium dihydrogen phosphate and hydrogen peroxide). This composite approach enables both mechanical abrasion and chemical reaction to work synergistically, achieving high polishing rates while maintaining reliability.
2Productivity
If polishing rate is increased, then efficiency improves, but control over polishing rate becomes difficult
Solution Approach 1:
The invention enables polishing rate adjustment through controlled variation of chemical composition parameters within specified ranges. By adjusting cerium oxide concentration (0.01-10 wt%), ammonium dihydrogen phosphate (0.001-1 wt%), and hydrogen peroxide (0.01-1 wt%), the polishing rate can be precisely controlled while maintaining efficiency.
Solution Approach 2:
The invention creates a dynamic polishing system where the chemical composition can be adjusted to adapt to different polishing requirements. The formulation allows flexible control of polishing rate by modifying the concentrations of active ingredients, providing adaptability for different applications.
3Productivity
If existing abrasive grains are used, then polishing can proceed, but high polishing rates of 50 nm/min or more cannot be achieved
Solution Approach 1:
The invention achieves high polishing rates by using cerium oxide as the abrasive grain material in a composite formulation with specific chemical agents. This composite approach enables polishing rates of 50 nm/min or more while maintaining ease of manufacture through straightforward mixing of the specified components.
Solution Approach 2:
The invention simplifies the path to high polishing rates by specifying clear concentration ranges for each component: cerium oxide (0.01-10 wt%), ammonium dihydrogen phosphate (0.001-1 wt%), and hydrogen peroxide (0.01-1 wt%). These defined parameters make the formulation easy to manufacture while achieving the desired high polishing performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for high polishing rates of silicon oxide in blanket wafers, achieving rates of 50 nm/min or more, addressing the inefficiencies of prior technologies.
Implementation Method 1
the raw material is selected on the basis of an average value of a positron lifetime as measured by a positron annihilation method
Implementation Method 2
CMP (chemical mechanical polishing) technology
Implementation Method 3
CMP (chemical mechanical polishing) technology
Data Source
AI summary
A selection method for a raw material for obtaining abrasive grains, in which the raw material contains cerium, and the raw material is selected on the basis of an average value of a positron lifetime as measured by a positron annihilation method. A raw material for obtaining abrasive grains, the raw material containing cerium, in which an average value of a positron lifetime as measured by a positron annihilation method is 285 to 360 ps. A method for producing abrasive grains, including pulverizing the above-described raw material. A method for producing a polishing liquid, including mixing the abrasive grains obtained by the above-described method for producing abrasive grains, and water. A polishing method, including polishing a member to be polished by using the polishing liquid obtained by the above-described method for producing a polishing liquid.