Cerium Oxide CMP Slurry for Faster Silicon Oxide Polishing

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Solution Overview

Problem

Existing CMP polishing liquids containing cerium oxide abrasive grains struggle to achieve an adequate polishing rate for silicon oxide, necessitating an improvement in processing efficiency for semiconductor components.

Innovation Solution

A slurry comprising cerium oxide abrasive grains and a compound X with a hydrogen bond term dH in Hansen solubility parameters of 15.0 MPa1/2 or more, which enhances the polishing rate for silicon oxide through hydrogen bonding and dehydration-condensation reactions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a CMP polishing liquid containing cerium oxide abrasive grains is used, then the polishing process can be performed, but the polishing rate for silicon oxide is insufficient

Engineering Contradiction:
Improvepolishing rate for silicon oxideVSAvoidadequacy of polishing performance
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The invention changes the chemical composition parameters of the slurry by introducing a specific organic compound with a hydrogen bond term dH of 15.0 MPa1/2 or more. This parameter change in the slurry composition enables the dehydration-condensation reaction that significantly increases the polishing rate for silicon oxide while maintaining reliable polishing performance

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention creates a composite slurry system combining cerium oxide abrasive grains with an organic compound having specific hydrogen bonding properties. This composite material approach allows the synergistic effect where the organic compound facilitates chemical reactions on the silicon oxide surface, dramatically improving the polishing rate while maintaining process reliability

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The slurry achieves a polishing rate for silicon oxide of 4600 Å/min or more, significantly improving the processing efficiency in semiconductor manufacturing.

Implementation Method 1

a hydrogen bond term dH in Hansen solubility parameters of the compound X is 15.0 MPa1/2 or more

Methodology Applied
Scientific EffectHydrogen bonding: Chemical Bonding

Implementation Method 2

enhances the polishing rate for silicon oxide through hydrogen bonding and dehydration-condensation reactions

Methodology Applied
Scientific EffectDehydration-condensation reaction: Chemical Bonding

Data Source

PatentUS12565599B2Slurry, polishing method, and method for manufacturing semiconductor component
Publication Date: 2026.03.03 RESONAC CORP

AI summary

A slurry containing: abrasive grains; a compound X; and water, in which the abrasive grains contain cerium oxide, and a hydrogen bond term dH in Hansen solubility parameters of the compound X is 15.0 MPa1/2 or more. A polishing method including polishing a surface to be polished by using this slurry.