CFET Gate Insulation for Compact IC Routing

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Solution Overview

Problem

In semiconductor fabrication, achieving higher gate density in integrated circuits is hindered by the need for dummy gate structures in routing, which occupies extra area and complicates the design, especially when transistors require different control signals.

Innovation Solution

The implementation of a complementary field-effect transistor (CFET) with an insulating layer between gates of different conductivity types, allowing them to operate on separate control signals without additional routing arrangements, thereby reducing the overall area required.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If dummy gate structures are added for routing, then routing functionality is achieved, but occupied area increases

Engineering Contradiction:
Improverouting functionalityVSAvoidoccupied area
Core Design Contradiction:
Adaptability or versatilityVSArea of stationary object

Solution Approach 1:

The patent merges the dummy gate structure with the actual gate structure by forming them simultaneously using the same fabrication processes. The dummy gate is integrated into the same layer as the functional gate, eliminating the need for separate routing arrangements and reducing occupied area while maintaining routing functionality.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The gate structure serves multiple functions: it acts as both the control electrode for the transistor and as a routing element for signal transmission. This multi-functionality eliminates the need for separate dummy gates dedicated solely to routing, thereby reducing the occupied area in the integrated circuit.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Adaptability or versatility

If separate routing arrangements are made for different control signals, then control signal routing is achieved, but device complexity increases

Engineering Contradiction:
Improvecontrol signal routingVSAvoidrouting arrangement complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent segments the gate structure into multiple independent gates (first gate and second gate) that can be controlled by different control signals. Each gate can be independently controlled while sharing the same physical structure, thereby achieving separate control signal routing without increasing device complexity or requiring additional routing arrangements.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables transistors to operate efficiently with separate control signals while minimizing the occupied area, resulting in a more compact and efficient integrated circuit design.

Implementation Method 1

The first insulating layer is disposed between the first gate of the first transistor and the second gate of the second transistor. The first insulating layer is configured to electrically insulate the first gate of the first transistor from the second gate of the second transistor.

Methodology Applied
Scientific EffectElectrical insulation: Dielectric

Data Source

PatentUS11374003B2Integrated circuit
Publication Date: 2022.06.28 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11374003B2 patent drawing
  • US11374003B2 patent drawing
  • US11374003B2 patent drawing

AI summary

An integrated circuit includes a first transistor, a second transistor, and a first insulating layer. The first transistor is disposed in a first layer and comprises a first gate. The second transistor is disposed in a second layer above the first layer and comprises a second gate. The first gate and second gate are separated from each other in a first direction. The first insulating layer is disposed between the first gate of the first transistor and the second gate of the second transistor. The first insulating layer is configured to electrically insulate the first gate of the first transistor from the second gate of the second transistor.