Multi-Element Chalcogen Composition for Low Off-Current Switching
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Solution Overview
Problem
Current semiconductor devices face challenges with high off-current values and poor endurance due to the limitations of chalcogen compounds like GeAsSe, which hinder their application in high-integration, miniaturized electronic products.
Innovation Solution
A chalcogen compound comprising selenium (Se), tellurium (Te), and additional elements such as indium (In), germanium (Ge), and arsenic (As) is developed, with a specific element ratio and composition that reduces off-current and enhances endurance by suppressing carrier hopping and increasing material density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional chalcogen compounds like GeAsSe are used in semiconductor devices, then the device structure can be maintained, but the off-current value becomes high and endurance becomes poor
Solution Approach 1:
The patent modifies the chemical composition parameters of the chalcogen compound by incorporating tellurium (Te) at specific concentrations (0.5-20.0 at%) and adjusting the Te/Se ratio (0.0-0.5), which changes the electrical properties to reduce off-current and improve endurance
Solution Approach 2:
The patent creates a composite chalcogen compound material combining multiple elements (first element from In/Al/Sr/Ca, second element from Ge/Sn, third element from As/Sb/Bi, selenium, and tellurium) to achieve superior electrical characteristics compared to conventional single-component chalcogen compounds
2Productivity
If conventional chalcogen compounds are used, then manufacturing processes can be maintained, but the device performance is limited for high-integration applications
Solution Approach 1:
The patent optimizes compositional parameters including the first element content (0.1-10.0 at%), second element content (5.0-30.0 at%), third element content (20.0-50.0 at%), and selenium content (0.0-70.0 at%) to enhance device performance for high-integration applications
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed chalcogen compound achieves low off-current values and high endurance, improving the reliability and performance of semiconductor devices, particularly in high-integration and miniaturized electronic applications.
Implementation Method 1
the chalcogen compound may have low off-current values and high threshold voltage values, and may have low threshold voltage variation and high endurance
Implementation Method 2
enhances endurance by suppressing carrier hopping and increasing material density
Data Source
AI summary
Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).