Chalcogenide Sputtering Target Composition for Low-Oxygen Full Density
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Solution Overview
Problem
Current methods for manufacturing chalcogenide sputtering targets face challenges such as high oxygen levels, low density, and porosity due to disparate melting points and vapor pressures of elements, as well as the expense and difficulty in scaling production using sealed quartz tubes.
Innovation Solution
A phase change material sputtering target with a primary matrix containing elements from Group VI and additional phases from Group IV or V, where the additional phases are homogeneously dispersed and the target is formed through a process involving vacuum hot pressing of alloy powders to achieve high density and low oxygen content.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If sealed quartz tubes are used to alloy and solidify the entire composition, then high metal purity and low oxygen content can be achieved, but the manufacturing cost increases and scalability becomes difficult
Solution Approach 1:
The patent divides the manufacturing process into two distinct stages: (1) alloying elements in sealed quartz tubes to achieve high purity, and (2) consolidating the alloyed powder in a graphite mold under vacuum hot pressing to achieve full density. This segmentation allows each stage to be optimized independently, maintaining purity while enabling scalability through the second stage's ability to process larger batches.
Solution Approach 2:
The patent performs preliminary alloying of elements in sealed quartz tubes before consolidation, ensuring high metal purity and low oxygen content are achieved in advance. This preliminary action allows the subsequent consolidation step to focus solely on achieving full density without compromising purity, thereby reducing overall manufacturing complexity and cost.
2Productivity
If individual elemental powders are consolidated to achieve desired composition, then production scalability is improved, but oxygen levels increase and density suffers
Solution Approach 1:
The patent performs preliminary alloying of elements in sealed quartz tubes before consolidation, ensuring high metal purity and low oxygen content are achieved in advance. This preliminary action allows the subsequent consolidation step to focus solely on achieving full density without compromising purity, thereby reducing overall manufacturing complexity and cost.
Solution Approach 2:
The patent uses vacuum hot pressing in a graphite mold to consolidate the alloyed powder. The vacuum environment prevents oxidation during consolidation, while the graphite mold provides an inert atmosphere that protects the material from oxygen contamination, thereby achieving full density without increasing oxygen levels.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in a sputtering target with high purity, low oxygen content, and full density, overcoming the limitations of existing methods by ensuring uniform elemental distribution and eliminating porosity, thus enhancing the performance and scalability of chalcogenide sputtering targets.
Implementation Method 1
Phase change materials store information in their amorphous and crystalline phases, and can be rapidly reversibly changed by applying voltage to the material
Implementation Method 2
In one PVD process, known as sputtering, atoms are ejected from the surface of a sputtering target by bombardment with gas ions, such as plasma
Implementation Method 3
Another method for forming chalcogenide sputtering targets utilizes sealed quartz tubes as reactors to alloy and solidify the entire composition
Data Source
AI summary
In one embodiment, a physical vapor deposition device includes a phase change material sputtering target includes a primary matrix and at least one additional phase. The primary matrix includes at least one element from Group VI of the periodic table excluding oxygen and one or more elements from Group IV or Group V of the periodic table. The additional phase is substantially homogenously dispersed in the primary matrix.