Chalcopyrite PV Thin-Film Manufacturing via Nanoprinting and Anodization
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The high silicon PV manufacturing supply chain faces challenges with high capital and energy intensities, which have not been sufficiently addressed, necessitating a solution that reduces both capital intensity and embedded energy while maintaining performance.
Innovation Solution
A hybrid processing approach for producing CIS-alloy PV products is developed, incorporating nanoprinting, selective etching, anodization, and rapid optical processing to enhance power conversion efficiency, reduce embedded energy, and lower manufacturing capital intensity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If silicon wafer-based technology is scaled to multi-TW range, then PV manufacturing capacity increases, but capital intensity and energy consumption increase significantly
Solution Approach 1:
The patent changes the material parameter from silicon to thin-film semiconductor materials, fundamentally altering the manufacturing process energy requirements. This material substitution enables lower-temperature processing and reduced energy consumption while maintaining PV manufacturing capacity at multi-TW scale
Solution Approach 2:
The patent extracts the PV active layer from the traditional silicon wafer structure, creating a thin-film configuration that reduces material usage and associated manufacturing energy. By taking out the bulk silicon requirement, the process eliminates the energy-intensive steps of silicon ingot growth and wafer slicing
2Productivity
If silicon wafer-based technology is scaled to multi-TW range, then PV manufacturing capacity increases, but capital intensity increases significantly
Solution Approach 1:
The patent merges multiple manufacturing steps into a more integrated thin-film deposition process, reducing the number of separate equipment systems required. By combining material deposition, pattern formation, and device fabrication into a streamlined sequence, capital intensity is reduced while maintaining multi-TW manufacturing capacity
Solution Approach 2:
The patent changes the structural parameter from thick silicon wafers to thin-film layers, enabling simpler, more cost-effective manufacturing equipment. This parameter change allows the use of less complex deposition and processing tools, thereby reducing capital intensity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively increases power conversion efficiency, reduces embedded energy and manufacturing capital intensity, and provides a scalable solution for PV power systems, addressing the limitations of conventional silicon-based technologies.
Implementation Method 1
selectively anodizing a top aluminum layer to form an alumina passivation/antireflection layer comprising the plurality of contact vias
Implementation Method 2
photochemical/thermal decomposition to form the plurality of nanorods
Implementation Method 3
photochemical/thermal decomposition to form the plurality of nanorods
Implementation Method 4
alkali ion exchanging the hole-selective contact/absorber/electron-selective contact structure
Data Source
AI summary
A photovoltaic structure includes: a hole-selective contact comprising an anodized aluminum layer overlaying a different electrode metal and a plurality of contact vias that extend through the anodized aluminum layer to the different electrode metal, wherein locations of the plurality of contact vias define an ordered array; an absorber comprising a chalcopyrite (Ag,Cu)(Ga, In)S,Se:Alk, where Alk represents at least one alkali element, the absorber comprising at least a residual of a contiguous nucleation template over the anodized aluminum layer; an electron-selective contact; and a plurality of nanorods located in the plurality of contact vias, the plurality of nanorods providing ohmic contacts between the hole-selective contact and the different electrode metal at their interface at a bottom of each contact via, and comprising at least a residual of at least one surfactant and at least a residual of at least one minority alloy constituent.