Chamber Adhesion Removal via Hydrogen Gas Reaction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for reducing defect density in semiconductor interfaces using hydrogen sulfide gas result in sulfur-containing adhesions that adhere to chamber and pipe surfaces, requiring disassembly for cleaning, which can lead to poor semiconductor performance due to re-adhesion of sulfur particles.
Innovation Solution
An adhesion removal method using a hydrogen-containing compound gas, such as hydrogen, methane, or ammonia, to react with sulfur-containing adhesions at controlled temperatures and pressures, converting them into hydrogen sulfide gas for removal without disassembly of the chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If hydrogen sulfide gas is used to form a passivation film on semiconductor substrates, then the defect density of the interface between materials is reduced, but sulfur-containing adhesions adhere onto the inner surface of the chamber and pipe surfaces
Solution Approach 1:
The patent converts the harmful sulfur-containing adhesions into removable hydrogen sulfide gas by reacting them with hydrogen-containing compound gas. The sulfur in the adhesion reacts with hydrogen to form hydrogen sulfide gas that can be evacuated, transforming a persistent contamination problem into a removable gaseous byproduct.
Solution Approach 2:
The patent introduces hydrogen-containing compound gas as an intermediary substance that mediates between the sulfur-containing adhesion and the vacuum system. This intermediary gas reacts with the adhesion to produce hydrogen sulfide gas, enabling removal without direct mechanical contact or chamber disassembly.
2Object-generated harmful factors
If the chamber is disassembled for cleaning sulfur-containing adhesions, then the adhesions are removed, but the device complexity increases and productivity decreases
Solution Approach 1:
The chamber performs self-cleaning by reacting sulfur-containing adhesions with hydrogen-containing compound gas to form removable hydrogen sulfide gas. The system cleans itself without requiring external disassembly or manual intervention, maintaining continuous operation and high productivity.
Solution Approach 2:
The patent replaces mechanical disassembly and manual cleaning with a chemical reaction process. Instead of physically removing adhesions through chamber disassembly, the method uses chemical reaction to convert adhesions into gaseous products that can be evacuated through the existing vacuum system.
3Object-generated harmful factors
If sulfur particles re-adhere onto the substrate after chamber evacuation, then the substrate is contaminated, but the semiconductor structure performance deteriorates
Solution Approach 1:
The patent performs preliminary cleaning by reacting sulfur-containing adhesions with hydrogen-containing compound gas to form hydrogen sulfide gas before substrate introduction. This preliminary action prevents sulfur particles from being present in the chamber when the substrate is introduced, eliminating the risk of re-contamination.
Solution Approach 2:
The patent changes the physical state of sulfur from solid adhesion/particle form to gaseous hydrogen sulfide through chemical reaction. This parameter change from solid to gas phase enables complete removal through evacuation without residual particles that could re-adhere to substrates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively removes sulfur-containing adhesions from chamber and pipe surfaces without disassembly, preventing re-adhesion and maintaining semiconductor structure quality.
Implementation Method 1
reacting a sulfur-containing adhesion with a cleaning gas containing a hydrogen-containing compound gas, thereby removing the sulfur-containing adhesion
Data Source
AI summary
Provided are an adhesion removal method capable of removing sulfur-containing adhesions that adhere onto the inner surface of a chamber or the inner surface of a pipe connected to the chamber without disassembly of the chamber and a film-forming method. Sulfur-containing adhesions adhering onto at least one of the inner surface of a chamber (10) and the inner surface of a discharge pipe (15) connected to the chamber (10) are removed by reaction with a cleaning gas containing a hydrogen-containing compound gas.