Chamber Cleaning Coating to Prevent Chlorine-Induced Corrosion
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Solution Overview
Problem
The existing chamber cleaning methods for substrate processing apparatuses fail to prevent damage to the chamber's internal components due to the reaction of chlorine-based byproducts with moisture, leading to corrosion and defects in thin film deposition processes.
Innovation Solution
A chamber cleaning method that includes a stabilizing process involving the injection of cleaning gases to remove byproducts and a protective film coating using aluminum, zirconium, or hafnium gases to form a protective metal oxide film on the chamber's inner surfaces, preventing corrosion and improving thin film characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If chlorine gas and hydrogen gas are used for cleaning the chamber, then byproducts deposited inside the chamber are etched and removed, but chlorine-containing deposits react with moisture in the air to generate hydrogen chloride that corrodes the chamber
Solution Approach 1:
The patent applies preliminary anti-action by performing a stabilizing process that deposits protective films (such as aluminum oxide, zirconium oxide, or hafnium oxide) on the chamber inner wall before the cleaning process. This protective layer prevents the harmful reaction between chlorine-containing deposits and moisture, thereby preventing chamber corrosion while maintaining cleaning effectiveness.
Solution Approach 2:
The patent uses a protective film (aluminum oxide, zirconium oxide, or hafnium oxide) as an intermediary substance between the chlorine-containing deposits and the chamber inner wall. This intermediary layer blocks the harmful interaction, allowing the cleaning process to remove byproducts without causing corrosion to the chamber components.
2Ease of operation
If the chamber is opened during or after cleaning, then access is provided for maintenance or process adjustments, but chlorine deposits react with air moisture to generate corrosive hydrogen chloride
Solution Approach 1:
The stabilizing process is performed before opening the chamber, depositing protective films that prevent the formation of corrosive hydrogen chloride. This allows the chamber to be opened for maintenance or process adjustments without the risk of corrosion from reactive chlorine deposits.
Solution Approach 2:
The patent performs the stabilizing process (depositing protective films) in advance before the cleaning process and before opening the chamber. This preliminary action ensures that when the chamber is opened, the protective layer is already in place to prevent harmful reactions with ambient moisture.
3Use of energy by moving object
If low temperature regions (≤150°C) exist in the chamber during cleaning, then energy consumption is reduced, but etching products including chlorine deposit and remain on chamber surfaces
Solution Approach 1:
The protective film acts as an intermediary that allows the cleaning process to occur at lower temperatures without leaving harmful residues. The film prevents chlorine-containing etching products from depositing on the chamber surface, maintaining cleanliness even when energy consumption is reduced by operating at ≤150°C.
Solution Approach 2:
The protective film serves as a temporary, disposable barrier that is deposited on the chamber surface, allows low-temperature cleaning to proceed without residue deposition, and is subsequently removed or replaced in the next process cycle, enabling energy-efficient cleaning operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents corrosion and enhances the performance and reliability of thin film transistors by blocking impurities and maintaining chamber integrity, thereby improving the overall quality of thin film deposition processes.
Implementation Method 1
hydrogen chloride (HCl) gas, generated by a reaction between the chlorine (Cl) gas and the hydrogen (H) gas, etches the byproducts deposited inside the chamber
Implementation Method 2
injecting a gas including at least one among aluminum (Al), zirconium (Zr) or hafnium (Hf) into the chamber as a coating gas, and generating a protective film on at least one surface of an inner wall of the chamber
Implementation Method 3
the deposits including chlorine (Cl) deposited inside the chamber during cleaning or after cleaning react with moisture in the air, and thus, hydrogen chloride (HCl) is generated
Data Source
AI summary
A chamber cleaning method in accordance with an exemplary embodiment includes a chamber stabilizing process for transporting a substrate, on which a thin film deposition process has been completed, out of a chamber and processing an inside of the chamber, wherein the chamber stabilizing process includes: a cleaning process for injecting a cleaning gas into the chamber and etching and cleaning byproducts generated by the thin film deposition; and a coating process for injecting a gas including at least one among aluminum (Al), zirconium (Zr) or hafnium (Hf) into the chamber, and generating a protective film on an inner wall of the chamber and at least one surface of components installed inside the chamber.