Semiconductor Chamber Cleaning via Temperature-Activated Fluorine

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Solution Overview

Problem

Current cleaning methods for semiconductor processing chambers after film formation are inefficient, particularly in removing deposits at low temperatures and ensuring thorough chamber cleaning without damaging chamber components.

Innovation Solution

A method involving sequential use of hydrogen fluoride (HF) gas at a first temperature to etch deposits, followed by elevating the chamber temperature to activate fluorine gas for further cleaning, ensuring effective removal of residual deposits without plasma, thereby simplifying the process and reducing maintenance costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a cleaning gas is supplied into the processing chamber after film formation to remove deposits, then cleaning effectiveness is improved, but cleaning efficiency is insufficient particularly at low temperatures

Engineering Contradiction:

Improvecleaning effectivenessVSAvoidcleaning efficiency

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The patent applies parameter changes by transitioning the cleaning process from low temperature to high temperature. Specifically, the processing chamber is heated from a first temperature (where fluorine gas is not activated) to a second temperature (where fluorine gas is activated), thereby changing the thermal parameter to enable effective deposit removal while maintaining cleaning efficiency

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs preliminary action by first supplying hydrogen fluoride gas at a lower temperature to perform initial cleaning, then elevating the temperature and supplying fluorine gas for activated cleaning. This sequential approach prepares the chamber progressively, ensuring effective deposit removal without damaging chamber components

Inventive Principle:

Principle #10Preliminary action

2Reliability

If the chamber temperature is elevated to activate fluorine gas for thorough cleaning, then deposit removal capability is improved, but risk of chamber component corrosion increases

Engineering Contradiction:

Improvedeposit removal capabilityVSAvoidchamber component corrosion

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies preliminary action by first supplying hydrogen fluoride gas at a lower temperature to perform initial cleaning before elevating the temperature. This preliminary cleaning step removes loose deposits and prepares the chamber for the subsequent high-temperature activated fluorine gas cleaning, reducing the risk of corrosion during the high-temperature phase

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent carefully controls the temperature parameter transition and gas supply timing. By elevating the temperature only after initial cleaning and maintaining precise control over the activated fluorine gas exposure, the patent achieves effective deposit removal while minimizing the duration and intensity of conditions that could cause chamber component corrosion

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances cleaning efficiency, reduces downtime, and improves the quality of subsequent film formation processes by thoroughly removing deposits and preventing chamber component corrosion.

Implementation Method 1

supplying a gas containing hydrogen and fluorine into the processing chamber heated to a first temperature

Methodology Applied

Scientific EffectEtching:

Implementation Method 2

elevating an inner temperature of the processing chamber to a second temperature higher than the first temperature, wherein the second temperature is a temperature whereat the gas containing fluorine is activated

Methodology Applied

Scientific EffectThermal activation:

Implementation Method 3

supplying a gas containing fluorine into the processing chamber heated to the second temperature, wherein the gas containing fluorine is activated

Methodology Applied

Scientific EffectChemical reaction:

Data Source

PatentUS9976214B2Cleaning method and method of manufacturing semiconductor device

Publication Date: 2018.05.22 KOKUSAI DENKI KK

AI summary

A technique for improving cleaning efficiency after a film forming process is performed is provided. Provided is a method of cleaning a processing chamber after a formation of a film on a substrate, the method including: (a) supplying a gas containing hydrogen and fluorine into the processing chamber heated to a first temperature; (b) elevating an inner temperature of the processing chamber to a second temperature higher than the first temperature; and (c) supplying a gas containing fluorine into the processing chamber heated to the second temperature, wherein the first temperature is a temperature whereat the gas containing fluorine is not activated, and the second temperature is a temperature whereat the gas containing fluorine is activated.