In-situ Deposition Chamber Cleaning via Reactive Gas
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Solution Overview
Problem
Existing deposition methods, such as ALD and CVD, result in film growth on deposition chamber walls and shields, leading to build-up and eventual delamination, which necessitates frequent cleaning to prevent particle generation and downtime, but current cleaning methods are inefficient and costly.
Innovation Solution
An in-situ cleaning method using reactive gases like hydrogen halides and inert gases to remove metal chalcogenide deposits from chamber walls and shields without removing the shields, allowing for more frequent cleaning cycles and reduced downtime by maintaining the chamber environment and temperature during the process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If deposition methods are used to grow films on substrates, then film coating is achieved, but film growth occurs on chamber walls and shields leading to build-up and delamination
Solution Approach 1:
The patent extracts and removes the harmful deposits from the chamber walls and shields by introducing reactive gases that chemically react with the metal chalcogenide films to form volatile products that can be purged from the chamber, thereby separating the cleaning function from the deposition process
Solution Approach 2:
The patent introduces reactive gases (intermediaries) that mediate between the deposits and the cleaning process. These gases chemically react with the metal chalcogenide deposits to form volatile compounds, enabling removal without direct mechanical contact or chamber disassembly
2Reliability
If mechanical or ex-situ chemical cleaning methods are used to remove deposits, then chamber cleaning is achieved, but equipment downtime and complexity increase
Solution Approach 1:
The patent performs cleaning action preliminarily within the deposition chamber before removal from the system. By introducing reactive gases that convert deposits to volatile forms in-situ, the cleaning occurs before the chamber would otherwise require disassembly or removal from the deposition system
Solution Approach 2:
The patent replaces mechanical cleaning methods (brushing, scraping, bead blasting) with a chemical gas-phase reaction system. The reactive gases chemically transform the deposits into volatile products that can be removed by gas flow, eliminating the need for mechanical contact or chamber disassembly
3Ease of operation
If shields are removed for cleaning, then access to chamber surfaces is improved, but equipment complexity and cleaning time increase
Solution Approach 1:
The chamber surfaces clean themselves through the chemical reaction with reactive gases. The metal chalcogenide deposits react with the introduced gases to form volatile products that are automatically purged by the gas flow, eliminating the need for manual intervention or shield removal
Solution Approach 2:
The cleaning action is performed preliminarily within the chamber before any disassembly occurs. The reactive gases are introduced while shields remain in place, converting deposits to volatile forms that can be removed without requiring shield removal or complex access procedures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The in-situ cleaning method effectively reduces particle generation and downtime by allowing for frequent, efficient removal of deposits without mechanical or ex-situ chemical cleaning, maintaining chamber integrity and process performance.
Implementation Method 1
pulsing a reactive gas including a hydrogen halide into a deposition chamber containing a metal chalcogenide formed on a deposition chamber surface to form a purgable material
Implementation Method 2
purging the purgable material from the deposition chamber
Data Source
AI summary
An in-situ method of cleaning a vacuum deposition chamber can include flowing at least one reactive gas into the chamber.


