Semiconductor Chamber Component Coating for Plasma Erosion Resistance

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Semiconductor processing chamber components, such as edge rings, are prone to damage and erosion due to plasma etching processes, leading to frequent replacement and downtime in semiconductor manufacturing.

Innovation Solution

A method involving a component body made from a conductive material with a low coefficient of thermal expansion, coated with a high-purity aluminum barrier layer and a hard-anodized metal oxide layer, which provides enhanced etch resistance and reduces consumption during plasma processing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional materials are used for processing chamber components, then manufacturing cost is reduced, but component durability and resistance to plasma erosion deteriorate

Engineering Contradiction:
Improvecomponent durabilityVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent employs a composite structure consisting of a silicon carbide substrate combined with an aluminum oxide coating layer. This composite material approach provides both the mechanical strength and thermal stability of silicon carbide while adding the plasma erosion resistance of aluminum oxide, thereby resolving the contradiction between durability and manufacturability.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent changes the physical and chemical parameters of the component surface by applying a hard-anodized aluminum oxide coating. This transformation modifies the surface properties to be highly resistant to plasma etching and erosion, improving reliability without fundamentally changing the bulk material properties or manufacturing process complexity.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If components are frequently replaced due to erosion, then performance is maintained, but downtime and production loss increase

Engineering Contradiction:
Improvecomponent performanceVSAvoiddowntime
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The hard-anodized aluminum oxide coating is applied in advance to the silicon carbide component surface before the component is installed in the processing chamber. This preliminary protective action ensures that the component is pre-conditioned to resist plasma erosion, thereby maintaining performance over extended periods and reducing the frequency of replacements and associated downtime.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If standard coating methods are used, then manufacturing process is simple, but coating quality and etch resistance are insufficient

Engineering Contradiction:
Improveetch resistanceVSAvoidcoating process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent employs hard anodization, a process that uses strong electric fields and oxidizing conditions to convert aluminum into a dense, highly cross-linked aluminum oxide coating. This accelerated oxidation process produces a coating with superior etch resistance and hardness compared to standard anodization or other conventional coating methods, justifying the increased process complexity.

Inventive Principle:
Principle #38Strong oxidants (Accelerated oxidation)

Solution Approach 2:

The patent replaces mechanical or chemical vapor deposition methods with an electrochemical anodization process. This substitution uses electrical energy to drive the oxidation reaction, producing a more uniform and adherent coating with controlled thickness and superior protective properties, thereby improving etch resistance despite the added electrical process complexity.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution significantly reduces the consumption and replacement frequency of components, minimizing downtime and maintaining performance by offering improved resistance to plasma erosion and thermal expansion issues.

Implementation Method 1

A metal oxide layer is then disposed over a surface of the component body

Methodology Applied
Scientific EffectElectroplating: Electroplating

Implementation Method 2

A metal oxide layer is then disposed over a surface of the component body

Methodology Applied
Scientific EffectAnodization: Anodising

Data Source

PatentUS12129569B2Method for conditioning semiconductor processing chamber components
Publication Date: 2024.10.29 LAM RES CORP
  • US12129569B2 patent drawing
  • US12129569B2 patent drawing
  • US12129569B2 patent drawing

AI summary

A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10−6/K. A metal oxide layer is then disposed over a surface of the component body.