Low-Temperature Process Chamber Conditioning
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Solution Overview
Problem
Current semiconductor production requires inefficient high-temperature chamber conditioning, leading to slow and energy-intensive processes, as well as reduced lifespan of heating elements due to repetitive temperature cycling.
Innovation Solution
A method for low-temperature conditioning of process chamber surfaces using a process gas comprising chlorine and nitrogen at pressures below 800 degrees Celsius, which removes residue and optionally deposits a coating, reducing energy consumption and extending heating element life.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-temperature conditioning is performed to remove contaminants and ensure uniformity, then cleaning effectiveness is improved, but process cycle time increases and heating element life decreases
Solution Approach 1:
The patent changes the temperature parameter from conventional high temperatures (>1000°C) to low temperatures (<800°C) while modifying the chemical environment by introducing chlorine-containing process gas. This parameter change allows effective contaminant removal at lower temperatures, reducing thermal cycling time and heating element stress while maintaining cleaning effectiveness through chemical reaction mechanisms.
Solution Approach 2:
The patent introduces chlorine-containing process gas as an intermediary substance that facilitates contaminant removal at low temperatures. The chlorine acts as a chemical mediator that reacts with carbon-containing contaminants to form volatile chlorocarbon species, enabling effective cleaning without requiring high thermal energy that would extend process cycle time and damage heating elements.
2Reliability
If high-temperature conditioning is performed to remove contaminants, then cleaning effectiveness is improved, but energy consumption increases
Solution Approach 1:
The patent changes the temperature parameter from conventional high temperatures (>1000°C) to low temperatures (<800°C), directly reducing the thermal energy input required for conditioning. This parameter change is compensated by introducing chlorine-containing process gas that provides chemical reactivity, maintaining contaminant removal effectiveness while significantly reducing overall energy consumption.
Solution Approach 2:
The chlorine-containing process gas serves as a chemical intermediary that enables contaminant removal through chemical reactions rather than purely thermal processes. This intermediary mechanism allows the system to achieve effective cleaning at lower temperatures, thereby reducing the energy consumption associated with heating and maintaining high temperatures during the conditioning process.
3Reliability
If repetitive temperature cycling is performed to achieve different conditioning and processing temperatures, then contaminant removal is improved, but heating element life decreases
Solution Approach 1:
The patent changes the operating temperature parameter from high (>1000°C) to low (<800°C), reducing the amplitude and frequency of temperature cycling required for effective conditioning. This parameter change decreases thermal stress on heating elements, extending their operational life while maintaining contaminant removal effectiveness through the introduction of chlorine-containing process gas that enables chemical cleaning mechanisms at lower temperatures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces process cycle time, increases efficiency, and extends the useful life of chamber components by conditioning at temperatures similar to processing temperatures, thereby improving temporal and energy efficiency.
Implementation Method 1
providing a process gas to the process chamber at the first pressure and the first temperature, wherein the process gas comprises chlorine and nitrogen to remove residue disposed on interior surfaces of the process chamber
Implementation Method 2
increasing the pressure in the process chamber from the first pressure to a second pressure while continuing to provide the process gas to the process chamber
Data Source
AI summary
Methods for removing residue from interior surfaces of process chambers are provided herein. In some embodiments, a method of conditioning interior surfaces of a process chamber may include maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius; providing a process gas to the process chamber at the first pressure and the first temperature, wherein the process gas comprises chlorine and nitrogen to remove residue disposed on interior surfaces of the process chamber; and increasing the pressure in the process chamber from the first pressure to a second pressure while continuing to provide the process gas to the process chamber.