Process Chamber Gas Recirculation for Semiconductor Substrates

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Solution Overview

Problem

Existing methods for providing gases to process chambers, such as semiconductor process chambers, result in a significant amount of gas being wasted as it does not interact effectively with the substrate, leading to inefficiencies and increased costs.

Innovation Solution

The implementation of a process chamber design that includes multiple substrate supports and a recirculation passageway system, allowing gases to flow over multiple substrates and recirculate, thereby maximizing gas utilization and minimizing waste.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of substance

If gas is provided to the interior volume of the process chamber, then the substrate can be processed (deposition or removal), but a significant fraction of the gas is exhausted without interacting with the substrate, resulting in gas waste

Engineering Contradiction:
Improvegas wasteVSAvoidprocessing efficiency
Core Design Contradiction:
Loss of substanceVSProductivity

Solution Approach 1:

The patent implements a recirculation system that captures gas exhausted from the process chamber and returns it to the chamber. This allows gas that did not interact with the substrate during its first pass to be reused, directly reducing gas waste while maintaining processing efficiency. The recirculation pathway enables continuous utilization of the gas supply.

Inventive Principle:
Principle #34Discarding and recovering

Solution Approach 2:

The recirculation system ensures continuous useful action by constantly cycling gas through the process chamber. Instead of gas being exhausted after a single pass, the system maintains continuous circulation, allowing multiple opportunities for gas-substrate interaction and maximizing the utility of each gas molecule supplied.

Inventive Principle:
Principle #20Continuity of useful action

2Loss of substance

If multiple substrate supports are added to enable gas recirculation, then gas utilization improves, but the device complexity increases

Engineering Contradiction:
Improvegas wasteVSAvoidchamber structure
Core Design Contradiction:
Loss of substanceVSDevice complexity

Solution Approach 1:

The process chamber is segmented into distinct regions: a first substrate support region and a second substrate support region. The barrier structure divides the interior volume to create separate flow paths. This segmentation allows the recirculation system to function effectively by directing gas flow between distinct zones, reducing gas waste while organizing the added complexity into manageable functional segments.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A barrier structure is introduced as an intermediary element between the first and second substrate supports. This barrier serves as a mediator that directs and controls gas flow between regions, enabling the recirculation function without requiring direct complex interconnections between all components. The barrier simplifies the overall system architecture by providing a clear flow division.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances gas utilization rates by allowing unused gas from one substrate to interact with another, reducing waste and operational costs while maintaining process uniformity across substrates.

Implementation Method 1

a recirculation passageway having a first port connected to the first portion of the interior volume and a second port connected to the second portion of the interior volume

Methodology Applied
Scientific EffectGas flow recirculation: Convection

Data Source

PatentUS20250018415A1Process chamber gas flow improvement
Publication Date: 2025.01.16 APPLIED MATERIALS INC
  • US20250018415A1 patent drawing
  • US20250018415A1 patent drawing
  • US20250018415A1 patent drawing

AI summary

A process chamber is provided including: a chamber body enclosing an interior volume; a first substrate support and a second substrate support each positioned in the interior volume, the first substrate support positioned over the second substrate support; a barrier positioned between the first substrate support and the second substrate support, the interior volume including a first portion above the barrier and a second portion below the barrier; a first gas inlet configured to provide gas to the first portion of the interior volume; and a recirculation passageway having a first port connected to the first portion of the interior volume and a second port connected to the second portion of the interior volume.