Process Chamber Lid Assembly for Reduced Plasma Arcing
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Solution Overview
Problem
In semiconductor processing systems, the buildup of deposition material on insulating rings and electrodes leads to increased localized electric fields, causing arcing within the chamber, which results in downtime and reduced production rates.
Innovation Solution
Incorporating an insulating member between the electrode and the insulating ring, positioned between the electrode and the processing volume, reduces material buildup on these components and mitigates arcing by acting as a barrier to process gases and thermal changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If deposition material builds up on insulating rings and electrodes, then processing continues, but localized electric field increases causing arcing
Solution Approach 1:
An insulating member is introduced as an intermediary component between the electrode and the insulating ring. This insulating member acts as a barrier that prevents deposition material from accumulating on the critical interface between the electrode and insulating ring, thereby eliminating the source of localized high electric fields that cause arcing, while allowing the processing system to continue operating
2Reliability
If arcing occurs in the chamber body, then processing stops for maintenance, but production rate decreases
Solution Approach 1:
The insulating member is pre-installed in the lid assembly before processing begins. This preliminary action prevents deposition material from reaching the electrode-insulating ring interface, thereby preventing arcing before it can occur and eliminating the need for maintenance shutdowns, thus maintaining high production rates
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration decreases the occurrence of arcing, reduces downtime, and increases production rates by maintaining a stable electric field and preventing material deposition on critical components.
Implementation Method 1
an insulating member positioned between the electrode and the insulating ring and a processing volume of the processing system
Implementation Method 2
During processing, deposition material may build up on the insulating rings, electrodes and/or in a gaps between electrodes and insulating rings. As the thickness of the deposition material increases, the localized high electric field increases, resulting in arcing within the chamber body
Data Source
AI summary
A processing system comprises a chamber body, a substrate support and a lid assembly. The substrate support is located in the chamber body and comprises a first electrode. The lid assembly is positioned over the chamber body and defines a processing volume. The lid assembly comprises a faceplate, a second electrode positioned between the faceplate and the chamber body, and an insulating member positioned between the second electrode and the processing volume. A power supply system is coupled to the first electrode and the faceplate and is configured to generate a plasma in the processing volume.


