Chamber Liner Conical Surface High Temperature Processing
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Solution Overview
Problem
Current semiconductor process chambers face challenges in maintaining high substrate processing temperatures due to halogen damage and particle formation, which degrades film quality and requires frequent cleaning.
Innovation Solution
A chamber liner with a conical inner surface angled inwardly to direct purge gases around the substrate support, restricting reactants and by-products from depositing below and on the edge, allowing for substrate heating above 650 degrees Celsius while shielding sensitive components from halogen damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If substrate processing temperature is increased above 480 degrees Celsius, then film quality and deposition rate are improved, but halogen damage and corrosion to chamber components worsen
Solution Approach 1:
The chamber is segmented into distinct zones using a chamber liner that separates the high-temperature substrate processing region from the chamber components. The liner creates a physical barrier that segments the chamber into a substrate support region where high temperatures are maintained and a chamber wall region that is protected from halogen exposure.
Solution Approach 2:
The chamber liner acts as an intermediary barrier between the halogen-containing process gases and the chamber components. It mediates the interaction by providing a protective interface that allows halogen reactants to reach the substrate for film deposition while preventing direct contact with the chamber walls and other sensitive components.
2Reliability
If conventional chamber design is used, then chamber components are exposed to halogen reactants, but particle formation and residue deposition worsen
Solution Approach 1:
The chamber liner segments the chamber interior into protected and exposed zones, creating a physical separation that prevents process gases containing halogen reactants from contacting chamber components. This segmentation eliminates the source of particle formation on chamber walls while maintaining reliable operation of protected components.
Solution Approach 2:
The chamber liner extracts and isolates the chamber components from the harmful halogen-containing atmosphere. By removing components from direct exposure to the reactive process gases, the liner extracts the problem of halogen-induced particle formation and residue deposition at its source.
3Manufacturing precision
If chamber cleaning is performed frequently to remove residue, then film quality is maintained, but productivity and manufacturing efficiency worsen
Solution Approach 1:
The chamber liner performs preliminary protection by preventing residue deposition on chamber components before it occurs. By establishing a protective barrier in advance, the liner eliminates the need for frequent cleaning interventions, allowing continuous high-quality film deposition without interruption for maintenance.
Solution Approach 2:
The chamber liner acts as a sacrificial, replaceable component that protects the more expensive and critical chamber components. Instead of cleaning or replacing entire chamber assemblies, the liner can be independently replaced when worn, maintaining productivity while ensuring consistent film quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables higher substrate processing temperatures, reducing particle deposition and extending the service interval of the process chamber, with a significant reduction in halogen reactants and increased film quality.
Implementation Method 1
The chamber liner includes a conical inner surface angled inwardly to direct purge gases around an edge of the substrate support
Implementation Method 2
The processing chamber utilizes an inert bottom purge flow to shield the substrate support from halogen reactants such that the substrate support may be heated to temperatures greater than about 650 degrees Celsius
Implementation Method 3
the substrate support may be heated to temperatures greater than about 650 degrees Celsius
Data Source
AI summary
Embodiments disclosed herein generally relate to a chamber liner for the high temperature processing of substrates in a processing chamber. The processing chamber utilizes an inert bottom purge flow to shield the substrate support from halogen reactants such that the substrate support may be heated to temperatures greater than about 650 degrees Celsius. The chamber liner controls a flow profile such that during deposition the bottom purge flow restricts reactants and by-products from depositing below the substrate support. During a clean process, the bottom purge flow restricts halogen reactants from contacting the substrate support. As such, the chamber liner includes a conical inner surface angled inwardly to direct purge gases around an edge of the substrate support and to reduce deposition under the substrate support and the on the edge.