Progressive Chamber Liner Fence for Uniform Plasma Etching
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Solution Overview
Problem
In semiconductor manufacturing, the asymmetric flow pattern of gases during plasma etching processes can negatively impact wafer quality, uniformity, and critical depth due to the asymmetric flow pattern within the process chamber, leading to issues with directional etching and wafer edge quality.
Innovation Solution
A chamber liner with a progressive fence design is implemented, featuring varying-sized fence openings and a split door to improve gas flow uniformity, constructed from materials like anodized aluminum and coated with Y-coatings, which helps in distributing ionized particles evenly and enhancing the energy transfer during plasma etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If gas flow is introduced into the process chamber during plasma etching, then the etching process can be performed, but asymmetric flow patterns occur that negatively impact wafer quality and uniformity
Solution Approach 1:
The chamber liner is segmented into multiple zones with different fence opening configurations. The fence structure is divided into vertical sections with varying opening sizes and distributions, creating zone-specific flow control that addresses asymmetric flow patterns while maintaining overall etching capability
Solution Approach 2:
Different regions of the chamber liner are provided with locally optimized fence opening characteristics. The fence structure varies by zone, with specific opening sizes, shapes, and distributions tailored to local flow requirements, ensuring uniform gas distribution across different areas of the chamber
2Device complexity
If conventional chamber liner design is used, then the chamber structure is simple, but dead zones and non-uniform gas flow occur that reduce etching uniformity
Solution Approach 1:
The fence structure is segmented into multiple vertical zones with distinct opening patterns. Each zone contains fence openings of specific sizes and distributions, creating a complex but systematic structure that eliminates dead zones and ensures uniform gas flow throughout the chamber
Solution Approach 2:
The fence openings are configured with varying dimensions in multiple directions - different widths, heights, and spacing patterns across vertical and horizontal dimensions. This multi-dimensional variation in opening geometry creates comprehensive flow distribution that prevents asymmetric patterns and dead zones
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in improved wafer edge physical quality, enhanced polymer defect removal, and increased yield in wafer acceptance testing and chip probing by ensuring uniform gas flow and reducing dead zones, thereby improving the overall etching process.
Implementation Method 1
gas or fluid impacts wafer quality and uniformity... plasma etching processes... activating a power generating assembly to generate plasma within the process chamber
Data Source
AI summary
A chamber liner for a semiconductor process chamber. The chamber liner includes an outer sidewall having a first circumference, and an inner sidewall have a second circumference that is less than the first circumference. The chamber liner also includes a chamber liner fence that is positioned between the outer sidewall and the inner sidewall. The chamber liner fence includes a first zone having one or more first zone openings, a second zone having one or more second zone openings, and a third zone having one or more third zone opening. The chamber liner further includes a split door positioned in the outer sidewall. Each of the first, second, and third zones have different widths, with the width of the third zone opening less than the width of the second zone opening, and the second zone opening less than or equal to the width of the first zone opening.