Film Deposition Chamber Metal Contamination Reduction
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Solution Overview
Problem
Fluorine-based cleaning gases used in film deposition apparatuses can cause metal contamination by damaging the apparatus components, leading to impurities in the deposited films and degrading film quality.
Innovation Solution
A method involving a temperature change in the process chamber from dry cleaning to film deposition temperature, where hydrogen and oxygen are activated to generate radicals for purging and coating the chamber interior without a substrate, effectively reducing metal contamination by extracting and capping metal impurities with an oxide film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If fluorine-based cleaning gas is used to clean the film deposition apparatus, then cleaning effectiveness is improved, but metal contamination increases due to damage to apparatus components
Solution Approach 1:
The patent applies preliminary action by performing a protective coating process on the turntable and chamber walls before the actual film deposition process. This coating layer is formed in advance to prevent metal contamination that would otherwise occur during subsequent cleaning operations with fluorine-based gases. The coating acts as a sacrificial layer that protects the underlying metal components from etching and contamination.
Solution Approach 2:
The patent converts the harmful etching action of fluorine-based cleaning gases into a beneficial process by controlling the cleaning conditions to selectively remove only the damaged coating layer while preserving the underlying metal components. The harmful metal contamination is converted into a controllable process parameter where the coating layer serves as a protective barrier that can be regenerated.
2Object-generated harmful factors
If fluorine-based cleaning gas is used to clean the film deposition apparatus, then film quality deteriorates due to metal impurities, but cleaning capability is maintained
Solution Approach 1:
The patent performs preliminary protective coating on the turntable and chamber walls before film deposition to prevent metal contamination. This advance preparation ensures that no metal impurities are generated during the cleaning process, thereby maintaining high film quality. The coating layer is restored in advance to prevent contamination of subsequent film layers.
Solution Approach 2:
The patent introduces a coating layer as an intermediary substance between the fluorine-based cleaning gas and the metal components. This intermediate layer absorbs the harmful etching action, preventing direct contact between the cleaning gas and metal surfaces. The coating acts as a mediator that protects the metal components while allowing the cleaning process to proceed effectively.
3Productivity
If the process chamber is cleaned with fluorine-based gas, then cleaning efficiency is improved, but apparatus component damage increases
Solution Approach 1:
The patent applies preliminary protective coating to the turntable and chamber walls before cleaning operations. This advance protection allows for efficient cleaning with fluorine-based gases without damaging the underlying metal components. The coating layer is restored in advance to prevent component damage while maintaining high cleaning efficiency.
Solution Approach 2:
The patent converts the potentially harmful etching action of fluorine-based cleaning gases into a beneficial cleaning process by using a sacrificial coating layer. The harmful effect on metal components is transformed into a controlled removal of the coating layer, which can be regenerated. This allows efficient cleaning while preserving component integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Significantly reduces metal contamination, allowing for smoother film deposition processes by efficiently removing metal impurities and preventing their incorporation into the deposited films, thereby improving film quality.
Implementation Method 1
Hydrogen and oxygen are activated in the vacuum chamber while supplying hydrogen and oxygen into the process chamber
Implementation Method 2
An inside of the process chamber is coated by performing the film deposition process without a substrate in the process chamber
Data Source
AI summary
A method for reducing metal contamination performed after dry cleaning of a process chamber used for a film deposition process and before starting the film deposition process is provided. In the method, a temperature in the process chamber is changed from a first temperature during the dry cleaning to a film deposition temperature. Hydrogen and oxygen are activated in the vacuum chamber while supplying hydrogen and oxygen into the process chamber. An inside of the process chamber is coated by performing the film deposition process without a substrate in the process chamber after the step of activating hydrogen and oxygen.