Process Chamber Oxidation to Extend ALD Cleaning Cycles
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Solution Overview
Problem
The frequent cleaning of process containers in semiconductor manufacturing due to film buildup leads to decreased productivity, as high cleaning frequencies disrupt the film-forming process and result in contamination from particle generation.
Innovation Solution
A method involving the alternation of supplying precursor and reaction gases during film formation, followed by oxidizing the film inside the container using oxygen and hydrogen gases after unloading the substrate, to extend the cleaning cycle and reduce particle generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the cleaning frequency is increased to remove cumulative film from the process container, then the film peeling and particle generation are suppressed, but the productivity of the film-forming process decreases
Solution Approach 1:
The patent applies preliminary action by performing oxidation of the cumulative film inside the process container before it reaches a thickness that causes particle generation. The oxidation process is conducted after substrate processing but before the next cleaning cycle, converting the cumulative film into an oxide layer that is less prone to peeling and particle formation. This proactive approach extends the cleaning cycle while maintaining film quality.
Solution Approach 2:
The patent changes the chemical state of the cumulative film by oxidizing it. By supplying oxygen-containing gas to convert the cumulative film into an oxide film, the physical and chemical properties of the film are altered, making it more stable and less likely to peel or generate particles. This parameter change allows for extended operation between cleanings.
2Productivity
If the cleaning cycle is extended to improve productivity, then the productivity of the film-forming process increases, but the cumulative film thickness exceeds the critical value leading to particle generation
Solution Approach 1:
The oxidation process is performed as a preliminary action before the cumulative film reaches a thickness that would cause particle generation. By oxidizing the film in advance, the patent prevents the harmful effects of thick cumulative film while allowing the cleaning cycle to be extended, thus maintaining both productivity and film quality.
Solution Approach 2:
The patent converts the potentially harmful cumulative film into a beneficial oxide film through oxidation. The oxide film, while still present in the process container, has different properties that prevent peeling and particle generation. This transformation turns a harmful factor into a beneficial one, allowing extended operation without cleaning.
3Reliability
If frequent cleaning is performed to maintain film quality, then particle generation is suppressed, but the cleaning cycle time increases and productivity decreases
Solution Approach 1:
The oxidation process serves as a preliminary maintenance action that prevents the need for frequent complete cleanings. By oxidizing the cumulative film after each substrate processing run, the patent maintains film quality over an extended period, reducing the frequency and total time of cleaning operations.
Solution Approach 2:
The oxidation process is integrated into the existing substrate processing cycle, utilizing the same equipment and gas supply systems. The process container oxidizes its own cumulative film without requiring external intervention or separate cleaning operations, effectively making the system self-maintaining between cleanings.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prolongs the cleaning cycle, suppresses particle generation, and enhances productivity by maintaining a stable film-forming process while reducing contamination and film peeling within the process container.
Implementation Method 1
supplying a hydrogen-containing gas into the process container in a state in which the processed substrate is unloaded from the interior of the process container
Implementation Method 2
supplying an oxygen-containing gas and a hydrogen-containing gas into the process container
Data Source
AI summary
There is included (a) loading a substrate into a process container; (b) performing a process of forming a film on the substrate in the process container by alternately or simultaneously performing, a predetermined number of times, supplying a precursor gas from a first supplier to the substrate, and supplying a reaction gas from a second supplier to the substrate; (c) unloading the processed substrate from an interior of the process container; and (d) oxidizing at least one part of a film formed inside the process container in (b) so as to change the at least one part into an oxide film in a state in which the processed substrate is unloaded from the interior of the process container, wherein in (d), an oxygen-containing gas and a hydrogen-containing gas are supplied into the process container and at that time, the hydrogen-containing gas is supplied toward the first supplier.