Processing Chamber Pressure Control to Prevent Condensation Etching

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Solution Overview

Problem

Existing substrate processing apparatuses face challenges in uniformly removing deposited films during cleaning processing due to temperature variations and pressure fluctuations, leading to etching unevenness and potential damage to processing container components.

Innovation Solution

A processing apparatus equipped with a temperature sensor, gas supply unit, pressure regulation unit, and control unit that utilizes a vapor pressure curve to set a target pressure below the vapor pressure of water, ensuring the pressure in the processing container remains below the vapor-liquid equilibrium point, preventing water condensation and promoting uniform etching.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If pressure is increased to enhance etching rate, then cleaning efficiency is improved, but water condensation occurs causing etching unevenness

Engineering Contradiction:
Improvecleaning efficiencyVSAvoidetching uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent dynamically adjusts pressure parameters based on temperature measurements. By referencing a vapor pressure curve that correlates temperature with water vapor pressure, the system determines an optimal pressure setting that prevents condensation while maintaining effective etching. This parameter change approach resolves the contradiction by adapting pressure to temperature conditions rather than using fixed pressure settings.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The system implements a feedback mechanism where temperature sensors continuously monitor the processing container, and the control unit uses this information to adjust pressure in real-time. The feedback loop ensures that pressure remains below the vapor pressure threshold identified from the vapor pressure curve, preventing water condensation while maintaining cleaning efficiency through optimized pressure control.

Inventive Principle:
Principle #23Feedback

2Productivity

If temperature is increased to improve etching rate, then cleaning efficiency is improved, but pressure control becomes more difficult to prevent condensation

Engineering Contradiction:
Improveetching rateVSAvoidpressure control complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by pre-establishing a vapor pressure curve that defines the relationship between temperature and water vapor pressure. This curve is stored in the control unit and used to determine target pressure settings before actual processing occurs. By having this reference data prepared in advance, the system simplifies real-time pressure control while maintaining the ability to prevent condensation across varying temperature conditions.

Inventive Principle:
Principle #10Preliminary action

3Ease of operation

If fixed pressure control is used, then device operation is simple, but etching unevenness occurs due to temperature variations

Engineering Contradiction:
Improvepressure control simplicityVSAvoidetching uniformity
Core Design Contradiction:
Ease of operationVSManufacturing precision

Solution Approach 1:

The patent transitions from static fixed pressure control to dynamic pressure control that adapts to temperature variations. The control unit continuously adjusts pressure settings based on real-time temperature measurements and the vapor pressure curve. This dynamic approach maintains etching uniformity across different temperature conditions while preserving operational simplicity through automated control.

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach stabilizes the cleaning process, suppresses etching unevenness, and maintains the efficiency of film removal, preventing damage to the processing container components by maintaining water vapor state and ensuring uniform etching rates across different temperatures.

Implementation Method 1

a temperature sensor that detects a temperature in the processing container

Methodology Applied
Scientific EffectTemperature detection:

Implementation Method 2

a vapor pressure curve in which the temperature in the processing container is associated with a vapor pressure of water in the processing container

Methodology Applied
Scientific EffectVapor pressure: Vapour Pressure

Implementation Method 3

the processing apparatus etches (removes) the deposited film by supplying a cleaning gas into the processing container

Methodology Applied
Scientific EffectEtching:

Data Source

PatentUS12017261B2Processing apparatus and cleaning processing method
Publication Date: 2024.06.25 TOKYO ELECTRON LTD
  • US12017261B2 patent drawing
  • US12017261B2 patent drawing
  • US12017261B2 patent drawing

AI summary

A processing apparatus includes: a processing container; a temperature sensor that detects a temperature therein; a gas supply unit that supplies a cleaning gas into the processing container; a pressure regulation unit that regulates a pressure in the processing container; and a control unit that controls the gas supply unit and the pressure regulation unit to perform a cleaning processing of removing a deposited film in the processing container. The control unit stores a vapor pressure curve in which the temperature in the processing container is associated with a vapor pressure of water in the processing container. In the cleaning processing, the control unit sets a target pressure below the vapor pressure curve based on the temperature detected by the temperature sensor and the vapor pressure curve, and controls the pressure regulation unit such that the pressure in the processing container becomes the target pressure.