Semiconductor Process Chamber Cleaning via Dynamic Pressure Cycling
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Solution Overview
Problem
The existing methods for cleaning semiconductor process chambers struggle to effectively remove deposits from areas outside the processing region due to difficulty in reaching these areas with cleaning gases, leading to low cleaning efficiency and incomplete removal, which can affect the in-plane uniformity and quality of thin films formed on substrates.
Innovation Solution
A method involving alternately changing the pressure in the process chamber from a first pressure range to a second pressure range while maintaining the supply of a cleaning gas, ensuring the pressure is not maintained at either range for extended periods, enhances the molar flux and reach of the cleaning gas into all areas, including those with intricate narrow gaps, thereby improving the removal of deposits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If cleaning gas is supplied into the process chamber to remove deposits, then cleaning effectiveness is improved, but cleaning gas cannot reach members located out of the processing region, resulting in low cleaning efficiency
Solution Approach 1:
The patent applies parameter changes by alternating the pressure in the process chamber between a first pressure range (e.g., 1-100 Pa) and a second pressure range (e.g., 100-1000 Pa). This pressure alternation changes the mean free path of cleaning gas molecules, enabling them to reach members located out of the processing region that are inaccessible at constant pressure, thereby improving cleaning efficiency without compromising cleaning effectiveness
2Ease of operation
If pressure in the process chamber is changed alternately between first and second pressure ranges, then cleaning gas reaches all areas including narrow gaps, but pressure control complexity increases
Solution Approach 1:
The patent implements periodic action by alternately repeating the pressure change between the first pressure range and the second pressure range multiple times during the cleaning process. This periodic pressure alternation creates dynamic gas flow patterns that penetrate into narrow gaps and reach inaccessible members, improving cleaning efficiency while the repetitive nature of the cycle simplifies control logic
Solution Approach 2:
The patent applies dynamics by making the pressure in the process chamber variable rather than static. The pressure is dynamically adjusted between two ranges during the cleaning process, creating moving gas flow patterns that can reach stationary members in difficult-to-access locations, thereby improving cleaning efficiency without requiring complex mechanical structures
3Manufacturing precision
If cleaning process is repeated multiple times to remove deposits, then in-plane uniformity of thin film is improved, but processing time increases due to incomplete deposit removal
Solution Approach 1:
By changing the pressure parameter dynamically between two ranges during a single cleaning cycle, the patent achieves complete deposit removal in one process rather than requiring multiple repeated cleanings. This reduces total processing time while maintaining the in-plane uniformity of thin films through thorough removal of deposits that could cause non-uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly enhances the cleaning efficiency, ensuring complete removal of deposits and maintaining the in-plane uniformity and quality of thin films formed on substrates by effectively reaching and cleaning all areas within the process chamber.
Implementation Method 1
cleaning an interior of the process chamber by supplying a cleaning gas into the process chamber
Implementation Method 2
changing a pressure in the process chamber from a first pressure range to a second pressure range and changing the pressure in the process chamber from the second pressure range to the first pressure range
Data Source
AI summary
A method of cleaning an interior of a process chamber by supplying a cleaning gas into the process chamber after a process of forming a thin film on a substrate in the process chamber is performed, including alternately repeating changing a pressure in the process chamber from a first pressure range to a second pressure range, and changing the pressure in the process chamber from the second pressure range to the first pressure range. In this method, when the pressure in the process chamber is changed to the first pressure range, the pressure in the process chamber is changed to the first pressure range without being maintained at the second pressure range, and when the pressure in the process chamber is changed to the second pressure range, the pressure in the process chamber is changed to the second pressure range without being maintained at the first pressure range.