Semiconductor Chamber Pyrometer Layout for Wall Temperature Uniformity
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Solution Overview
Problem
Existing semiconductor processing systems face challenges in controlling temperature uniformity within the chamber body, leading to non-uniform material layer deposition and potential material decomposition, which affects productivity and product quality.
Innovation Solution
A chamber arrangement with multiple pyrometers optically coupled to different locations on the chamber body to measure temperature differences, coupled with a controller that adjusts heating elements and coolant flow rates to maintain uniform wall temperature, ensuring precise temperature control during material layer deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heating elements and blowers are used to heat the substrate and chamber body, then the substrate can reach desired deposition temperature, but temperature uniformity across the chamber body becomes difficult to control
Solution Approach 1:
The chamber body is divided into multiple heating zones with independent temperature control. Multiple pyrometers are positioned at different locations (first location and second location offset from each other) to monitor temperature distribution across the chamber body, allowing segmented control of thermal fields to achieve uniform temperature throughout the deposition chamber
Solution Approach 2:
Different regions of the chamber body are provided with differentiated heating and cooling capabilities. The system applies local quality control by adjusting heating/cooling parameters specifically at locations where temperature deviations are detected, rather than applying uniform control across the entire chamber, thereby maintaining optimal temperature uniformity
2Ease of operation
If a single temperature is used for substrate heating, then the setup is simple to operate, but it cannot accommodate different material deposition requirements
Solution Approach 1:
The temperature control system is made dynamic and adjustable rather than fixed. Multiple pyrometers monitor temperature at different locations, and the heating/cooling system dynamically adjusts parameters based on real-time temperature measurements and material deposition requirements, allowing the same chamber to accommodate various material types with different deposition temperature needs
Solution Approach 2:
The system enables parameter changes by allowing independent adjustment of temperature, pressure, and precursor flow rates. Different material depositions are accommodated by changing these parameters - for example, using lower temperatures for temperature-sensitive materials while maintaining higher temperatures for materials requiring thermal activation, all within the same chamber environment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution ensures uniform temperature distribution across the chamber body, maintaining substrate temperature and improving material layer deposition quality by minimizing variations in precursor decomposition and etchant consumption, thereby enhancing productivity and product consistency.
Implementation Method 1
A pyrometer uses the intensity of the emitted radiation from an object to determine the temperature of the object
Implementation Method 2
Heating the substrate, and consequentially the chamber body which houses the substrate and substrate support, may be accomplished through the use of heating elements surrounding the chamber body
Implementation Method 3
heating elements surrounding the chamber body and blowers
Data Source
AI summary
A chamber arrangement for a semiconductor processing system includes a chamber body, a substrate support, a first chamber pyrometer, and a second chamber pyrometer. The chamber body has an exterior surface, a hollow interior, and the substrate support is supported for rotation within the interior of the chamber body. The first chamber pyrometer and second chamber pyrometer are optically coupled to the exterior surface of the chamber body. The first chamber pyrometer is configured to acquire a first temperature measurement at a first location on the exterior surface of the chamber body, and the second chamber pyrometer is configured to acquire a second temperature measurement at a second location on the exterior surface of the chamber body. The second location is offset from the first location to throttle temperature across the exterior surface of the chamber body between the first location and the second location. Material layer deposition methods and computer program products are also described.


