Semiconductor Chamber Spatial Modeling for Variability Control

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Solution Overview

Problem

Semiconductor wafer processing complexity increases with shrinking device sizes, requiring extensive manual tuning of multiple knobs, and lacks precise in-line metrology, leading to suboptimal process solutions and resource wastage.

Innovation Solution

A spatial model using machine-learning to predict performance, combining virtual and on-board metrology data, enabling digital design of experiments to optimize processes without physical wafers, and adaptive control models for chamber-to-chamber and wafer-to-wafer variability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional manufacturing processes are used without advanced modeling, then device performance variability is reduced, but process development time and cost increase significantly

Engineering Contradiction:
Improvedevice performance variabilityVSAvoidprocess development time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

A spatial model is built during the process development phase to predict chamber performance characteristics before actual manufacturing. This preliminary modeling allows optimization of process parameters and identification of potential variability issues ahead of time, reducing both development time and device performance variability during production

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The system incorporates periodic updates of the process control model using machine learning techniques that learn from actual manufacturing data. This feedback mechanism continuously refines the spatial model predictions, improving manufacturing precision while maintaining efficient process development through adaptive control

Inventive Principle:
Principle #23Feedback

2Loss of time

If spatial modeling is implemented for process optimization, then process development time is reduced, but system complexity increases

Engineering Contradiction:
Improveprocess development timeVSAvoidsystem complexity
Core Design Contradiction:
Loss of timeVSDevice complexity

Solution Approach 1:

A spatial model acts as an intermediary between process parameters and chamber performance predictions. This computational model simplifies the complex relationships by providing a predictive framework that guides process optimization without requiring direct experimentation with all parameter combinations, thus reducing development time while managing system complexity

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The system optimizes process development by changing and adjusting model parameters iteratively during the development phase. Machine learning techniques automatically tune spatial model parameters based on observed data, reducing the need for manual system configuration and lowering operational complexity while accelerating process development

Inventive Principle:
Principle #35Parameter changes

3Manufacturing precision

If periodic model updates are performed using machine learning, then device performance variability is controlled, but computational resources and processing time increase

Engineering Contradiction:
Improvedevice performance variabilityVSAvoidcomputational resources
Core Design Contradiction:
Manufacturing precisionVSUse of energy by moving object

Solution Approach 1:

The process control model is updated periodically at predetermined intervals (e.g., wafer-to-wafer, lot-to-lot, chamber-to-chamber) rather than continuously. This periodic updating approach maintains device performance variability control through regular model refinement while significantly reducing computational resource consumption compared to continuous updates

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

The system applies machine learning updates at selective intervals rather than for every single process run. This partial updating strategy provides sufficient model accuracy to control device performance variability while avoiding the excessive computational burden of updating after every measurement, optimizing the balance between precision and resource usage

Inventive Principle:
Principle #16Partial or excessive action

Data Source

PatentEP4618138A2Advanced semiconductor process optimization and adaptive control during manufacturing
Publication Date: 2025.09.17 APPLIED MATERIALS INC
  • EP4618138A2 patent drawingFigure 1A
  • EP4618138A2 patent drawingFigure 1B
  • EP4618138A2 patent drawingFigure 2~3

AI summary

A spatial model is built to predict performance of a processing chamber. The spatial model is used to converge faster to a desired process during the process development phase. A system for controlling device performance variability during manufacturing includes a process platform, on-board metrology (OBM) tools, and a machine-learning based process control model. The system receives SEM metrology data, and updates the process control model periodically (e.g., wafer-to-wafer, lot-to-lot, chamber-to-chamber etc.) using machine learning techniques. Periodic update of the process control model may account for chamber-to-chamber variability.