Substrate Processing Chamber State Detection via Gas Analysis Calibration
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Solution Overview
Problem
Existing substrate processing apparatuses face challenges in accurately detecting the state within a housing chamber due to factors like window clouding and sensor replacement, which affect the reliability of spectral analysis results.
Innovation Solution
A substrate processing apparatus is designed with first and second gas analysis apparatuses to analyze gas before and after processing, and a state detection apparatus calculates correction values to isolate influences from the first gas analysis apparatus deterioration and variations, ensuring accurate detection of the chamber state by calibrating the analysis results.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If spectral analysis is performed using a spectroanalyzer to detect chamber state, then plasma processing monitoring is enabled, but measurement precision deteriorates due to window clouding and sensor replacement
Solution Approach 1:
The patent introduces a reference gas analysis apparatus as an intermediary device that measures the same processing gas outside the chamber. This reference measurement serves as a mediator to compensate for variations in the spectral analysis system, allowing accurate chamber state detection despite window clouding or sensor replacement by comparing against the stable reference gas composition data
Solution Approach 2:
The patent changes the measurement parameter from direct spectral intensity (which degrades over time) to the ratio between reference gas analysis results and processing gas analysis results. This parameter transformation makes the measurement system robust against sensor aging and window clouding, as the ratio compensates for systematic variations in the detection system
2Reliability
If inter-chamber parts are replaced to maintain processing quality, then device reliability is improved, but measurement precision deteriorates due to changes in plasma emission characteristics
Solution Approach 1:
The patent implements a feedback mechanism where the reference gas analysis apparatus continuously provides baseline data on processing gas composition. When inter-chamber parts are replaced, the system uses the reference measurements to detect and compensate for changes in plasma emission characteristics, maintaining accurate chamber state monitoring despite hardware modifications
Solution Approach 2:
The patent performs preliminary analysis of the processing gas using the reference gas analysis apparatus before the gas enters the chamber. This preliminary measurement establishes a baseline that accounts for gas composition variations, allowing the spectral analysis system to focus on detecting only the chamber-specific plasma states without being confounded by inter-chamber part variations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise detection of the chamber state and accurate determination of the plasma processing end point, independent of inter-chamber part replacements and sensor variations, enhancing the reliability of spectral analysis.
Implementation Method 1
a plasma generation apparatus for generating plasma in the gas take-in chamber
Implementation Method 2
a spectroscopic measurement apparatus for dispersing light emitted from atoms or molecules in the gas excited by the plasma and measuring an emission intensity
Implementation Method 3
a plasma generation apparatus for generating plasma in the gas take-in chamber
Implementation Method 4
a spectroscopic measurement apparatus for dispersing light emitted from atoms or molecules in the gas excited by the plasma and measuring an emission intensity
Data Source
AI summary
An analysis method for a substrate processing apparatus capable of accurately detecting a state in a housing chamber. Emission intensities of processing gas before being introduced into the chamber and processing gas having passed therethrough are measured before an inter-chamber part is replaced. If an emission intensity measured after the replacement coincides with that measured before the replacement, an emission intensity of the processing gas having passed through the chamber is measured, and a variation between the emission intensities of the processing gas having passed through the chamber measured before and after the replacement is calculated. After start of plasma processing on wafers, an emission intensity of the processing gas having passed through the chamber is measured and the variation is removed therefrom to calculate an emission intensity really representing a state in the chamber, thus detecting an end point of plasma processing therefrom.