CVD Chamber Surface Cooling for Silicon Film Uniformity
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Solution Overview
Problem
Chemical vapor deposition (CVD) processes using SiH4 result in films of lower uniformity and higher thermal budgets, while alternatives like disilane or trisilane cause gas-phase nucleation, leading to particle contamination and defects in deep sub-micron processes.
Innovation Solution
Controlling the temperature of the top inner surface of the reaction chamber below 50°C during CVD processes using silicon-containing gases like di- or tri-silane, reducing gas-phase nucleation and particle formation, and maintaining the substrate temperature between 600-750°C to enhance film uniformity and chamber cleanliness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If disilane or trisilane is used instead of SiH4, then film uniformity improves and thermal budget decreases, but gas-phase nucleation increases causing particle contamination
Solution Approach 1:
The patent changes the temperature parameter of the reaction chamber from conventional high temperature to below 50°C. This parameter change suppresses gas-phase nucleation of silicon-containing gases while maintaining the benefits of using disilane or trisilane for improved film uniformity and lower thermal budget
Solution Approach 2:
The patent converts the harmful low decomposition temperature of disilane/trisilane (which causes gas-phase nucleation) into a benefit by controlling the reaction chamber temperature below 50°C. This prevents unwanted nucleation while still allowing the desired low-temperature decomposition for improved film quality
2Temperature
If SiH4 is used for CVD, then thermal budget is lower, but film uniformity decreases
Solution Approach 1:
The patent changes the temperature parameter to below 50°C and uses disilane or trisilane instead of SiH4, achieving both lower thermal budget and improved film uniformity simultaneously
3Productivity
If reaction chamber temperature is increased to improve deposition rate, then productivity increases, but particle formation increases
Solution Approach 1:
The patent changes the temperature parameter to below 50°C, which suppresses particle formation through gas-phase nucleation while maintaining acceptable deposition rates using disilane or trisilane as the silicon source
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the uniformity and cleanliness of silicon-containing films, reduces particle defects, and maintains reaction chamber cleanliness, thereby increasing process yield and reducing maintenance costs.
Implementation Method 1
it easily causes gas-phase nucleation to form particles
Implementation Method 2
the temperature of a cooling system for cooling the top inner surface below 50° C.
Implementation Method 3
the substrate may be heated by a heater disposed under it and the temperature of the heater may be set about 600-750° C.
Implementation Method 4
Chemical vapor deposition (CVD) is a technology that deposits on a substrate a solid reaction product formed from the reaction of one or more gaseous reactants
Data Source
AI summary
A method for forming a silicon-containing film is described. A substrate is placed in a reaction chamber, and then a silicon-containing gas is introduced into the reaction chamber to conduct a CVD process and deposit a silicon-containing film on the substrate. During the CVD process, the temperature of at least the top inner surface of the reaction chamber is controlled below 50° C.