Semiconductor Chamber Wall Laminate for Uniform YF3 Coating
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Solution Overview
Problem
Conventional methods for forming a YF3 layer on semiconductor manufacturing apparatus chamber walls face challenges such as low vapor pressure of yttrium-comprising source materials, leading to non-uniform layer thickness and irregularities due to poor surface conditions, which result in corrosion and contamination issues.
Innovation Solution
A laminate structure comprising a base material with an amorphous layer and a crystalline YF3 layer is formed using atomic layer deposition, where the amorphous layer acts as a buffer to stabilize the surface, and the crystalline layer is formed by adjusting the supply of yttrium and fluorine source materials to achieve a uniform thickness and density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a YF3 layer is formed using ALD with conventional yttrium-comprising source materials, then corrosion resistance is improved, but layer uniformity deteriorates due to low vapor pressure causing insufficient material supply
Solution Approach 1:
The patent changes the physical state parameter of the yttrium source material from solid to liquid, and adjusts the temperature parameter to maintain the source material in a liquid state during deposition. This parameter change enables sufficient vapor pressure and material supply rate, achieving both high corrosion resistance and layer uniformity that were previously contradictory
Solution Approach 2:
The patent creates a composite coating structure with an amorphous layer containing yttrium, aluminum, and oxygen, and a crystalline layer of YF3. This composite material approach combines the benefits of both layer types to achieve superior corrosion resistance while maintaining layer uniformity through the controlled deposition process
2Reliability
If a YF3 layer is formed directly on the base material, then corrosion resistance is improved, but layer irregularity occurs due to poor surface conditions affecting source material adsorption
Solution Approach 1:
The patent performs preliminary action by forming an amorphous layer containing yttrium, aluminum, and oxygen on the base material before forming the crystalline YF3 layer. This preliminary amorphous layer creates a uniform surface that eliminates the poor surface conditions (crystal direction variations, grain size differences) that would otherwise cause layer irregularity, while still providing the desired corrosion resistance
Solution Approach 2:
The amorphous layer acts as an intermediary between the base material and the crystalline YF3 layer. It mediates the interaction by providing a uniform surface for crystalline layer formation, preventing direct contact between the crystalline layer and the irregular base material surface, thus eliminating layer irregularity while maintaining corrosion protection
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The laminate effectively suppresses layer irregularities and enhances corrosion resistance, reducing contamination and maintaining the integrity of the chamber walls, thereby improving semiconductor manufacturing yield.
Implementation Method 1
an amorphous layer provided on the base material
Implementation Method 2
forming the crystalline layer on the surface of the amorphous layer by an atomic layer deposition method
Data Source
AI summary
A laminate for a chamber inner wall of a semiconductor manufacturing apparatus is provided. The laminate prevents layer unevenness from occurring in the chamber inner wall. The laminate has a base material, an amorphous layer on the base material, and a crystalline layer on the amorphous layer. The thickness of the amorphous layer is greater than or equal to 1 nm and less than or equal to 10 nm. The crystalline layer includes yttrium and fluorine, and a density of the crystalline layer is greater than and equal to 4.7 g/cm3 and less than or equal to 5.3 g/cm3.