Chamfered Capacitor Connection Line to Cut DRAM Bit Line Leakage
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Solution Overview
Problem
In Dynamic Random-Access Memory (DRAM) semiconductor structures, parasitic capacitance and leakage current occur due to the close proximity of conductive blocks to bit lines, which are exacerbated by scaling down manufacturing processes, leading to performance degradation.
Innovation Solution
A semiconductor structure with a chamfered structure between the first and second conductive blocks, increasing the distance between the second conductive block and the bit line, thereby reducing parasitic capacitance and leakage current, and improving performance by preventing direct contact between the second conductive block and the bit line.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the manufacturing process is scaled down to increase integration density, then productivity and device capacity are improved, but parasitic capacitance and leakage current increase due to reduced spacing between conductive blocks and bit lines
Solution Approach 1:
The capacitor connection line is segmented into two separate conductive blocks (first conductive block and second conductive block) with a chamfered structure between them. This segmentation allows the first conductive block to contact the bit line while the second conductive block contacts the capacitor, with the chamfered structure creating physical separation that reduces parasitic capacitance between the capacitor connection line and bit line despite close spacing requirements for high integration density
Solution Approach 2:
The chamfered structure introduces a dimensional change by creating an angled interface between the first and second conductive blocks. This angular geometry allows the conductive blocks to be positioned closer to the bit line in the horizontal plane while maintaining vertical separation, effectively using the third dimension (angle/depth) to reduce parasitic capacitance without sacrificing integration density
2Productivity
If the distance between the second conductive block and bit line is reduced to improve integration density, then productivity is improved, but parasitic capacitance and leakage current increase
Solution Approach 1:
The capacitor connection line is divided into two conductive blocks separated by a chamfered structure. The first conductive block is positioned close to the bit line for compact layout, while the second conductive block contacts the capacitor. The chamfered structure creates a physical barrier that prevents direct electrical interaction, reducing parasitic capacitance and leakage current while maintaining high integration density
Solution Approach 2:
The chamfered structure acts as an intermediary element between the first and second conductive blocks. This intermediate structure physically separates the two conductive regions, preventing direct contact and reducing parasitic capacitance formation between the capacitor connection line and bit line, thereby improving device reliability without compromising integration density
3Reliability
If a chamfered structure is introduced to reduce parasitic capacitance and leakage current, then reliability is improved, but device complexity and manufacturing steps increase
Solution Approach 1:
The chamfered structure changes the geometric parameters of the capacitor connection line by introducing an angled interface between the first and second conductive blocks. This parameter change (from vertical to angled contact) simplelly modifies the existing conductive block geometry without adding separate components, reducing parasitic capacitance while minimizing increases in device complexity
Data Source
AI summary
A semiconductor structure includes a substrate, bit line structures, and capacitor connection lines. A plurality of bit line structures are arranged on the substrate. Contact holes are formed between adjacent bit line structures. A capacitor connection line includes a first conductive block and a second conductive block. The first conductive block and the second conductive block are sequentially filled in a contact hole. A chamfered structure is formed on a top end of the first conductive block. The chamfered structure is adjacent to a bit line structure. A bottom end of the second conductive block matches the chambered structure.