Chamfered Conductor Corners for Thermal Stress Reduction

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Solution Overview

Problem

Integrated circuit chip structures face cracking and delamination issues due to thermal expansion mismatches between different materials in the back-end-of-line (BEOL) structures, particularly at the interfaces between underfill and passivation layers, which can lead to microcracks and delamination.

Innovation Solution

The introduction of chamfered corners on patterned conductors and through conductors, which reduce stress concentrations by eliminating right-angled corners and distributing thermal stress more evenly, thereby reducing the likelihood of cracking and delamination.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If right-angled corners are used in patterned conductors and through conductors, then manufacturing is simpler, but stress concentration occurs leading to cracking and delamination

Engineering Contradiction:
Improvecracking resistanceVSAvoidconductor geometry complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies curvature by replacing right-angled corners with chamfered corners (45-degree angled corners) in patterned conductors and through conductors. This geometric modification eliminates stress concentration points while maintaining manufacturing feasibility through standard photolithography and etching processes. The chamfered corners distribute thermal stress more evenly, preventing cracking and delamination at conductor intersections.

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Adaptability or versatility

If different materials with different CTE are used in BEOL structures, then functional requirements are met, but thermal expansion mismatch causes delamination and microcracks

Engineering Contradiction:
Improvematerial selection flexibilityVSAvoidinterface stability
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent applies local quality by modifying the geometry of conductors specifically at corner locations where stress concentration occurs, while leaving the rest of the conductor structure unchanged. The chamfered corners are strategically placed at intersections and bends to locally manage stress, allowing the use of different CTE materials in BEOL structures without compromising overall interface stability.

Inventive Principle:
Principle #3Local quality

3Reliability

If chamfered corners are introduced in conductors, then stress distribution is improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improvedelamination resistanceVSAvoidcorner geometry precision
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent applies parameter changes by specifying the chamfer angle (45 degrees) and providing guidance on chamfer dimensions relative to conductor width. These standardized parameters enable manufacturers to achieve the required stress distribution benefits using conventional fabrication processes without requiring ultra-precise manufacturing capabilities. The 45-degree angle is particularly advantageous as it can be achieved through standard diagonal etching techniques.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the reliability of chip packages by minimizing cracking defects and improving interaction between chip components, effectively addressing the thermal expansion mismatch issues.

Implementation Method 1

These different materials in BEOL structures can have different coefficients of thermal expansion (CTE) relative to other layers internal to the IC chips. CTE mismatch is amplified at different material interfaces... The introduction of chamfered corners on patterned conductors and through conductors, which reduce stress concentrations by eliminating right-angled corners and distributing thermal stress more evenly

Methodology Applied
Scientific EffectThermal stress distribution: Thermal Expansion

Data Source

PatentUS10170439B1Chamfering for stress reduction on passivation layer
Publication Date: 2019.01.01 GLOBALFOUNDRIES INC
  • US10170439B1 patent drawing
  • US10170439B1 patent drawing
  • US10170439B1 patent drawing

AI summary

Devices are formed to have inner layers that have electronic devices, and an outer passivation layer. A patterned conductor is formed on a first surface of the inner layers, and through conductors (that extend through interior insulator layers) are positioned to electrically connect the patterned conductor to the electronic devices. The patterned conductor includes a pattern of connected linear sections that are parallel to the first surface of the inner layers. The linear sections of the patterned conductor meet at conductor corners, and at least one of the conductor corners of the patterned conductor includes a chamfer side that terminates at the linear sections. Further, the chamfer side is not perfectly diagonal, but instead forms unequal angles with the linear sections that intersect to form the corner.