Chamfered Passivation Layer Corners for Die Singulation Damage
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Solution Overview
Problem
During die singulation, the meandering of separation lines at the corners of integrated circuit die can cause damage to the passivation layer, leading to yield loss and potential rejection of damaged dies.
Innovation Solution
The integration circuit die features a passivation layer with chamfered corners, which are dimensioned to mitigate damage during die singulation. The chamfered corners are formed by selectively removing portions of the passivation layer in the corner regions, increasing the distance between the passivation layer and the substrate corners.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If mechanical breaking is used for die singulation, then productivity is improved, but the passivation layer at corner regions is damaged due to meandering separation lines
Solution Approach 1:
The passivation layer corners are chamfered in advance before the die singulation process. This preliminary action creates a beveled surface that prevents the meandering separation line from damaging the passivation layer during mechanical breaking, while still allowing high-speed die separation to proceed
Solution Approach 2:
The chamfering is applied specifically to the corner regions of the passivation layer where damage occurs, while the rest of the passivation layer remains intact. This localized modification protects the vulnerable corner areas without affecting the overall passivation function
2Reliability
If chamfered corners are formed on the passivation layer, then passivation layer damage is reduced, but additional fabrication steps are required
Solution Approach 1:
The chamfering step is combined with the existing passivation layer formation process. By integrating the chamfering operation into the standard fabrication flow, the additional step is minimized and does not significantly increase overall process complexity
Solution Approach 2:
The chamfer angle and dimensions are optimized to provide adequate protection against damage while maintaining compatibility with standard fabrication equipment and processes. The specific angular parameters are chosen to balance protection effectiveness with manufacturing simplicity
Data Source
AI summary
An integrated circuit die is provided that includes a substrate, a semiconductor device formed on the substrate, and a passivation layer formed over the substrate. The passivation layer has chamfered corners disposed in corner regions of the integrated circuit die. The chamfered corners of the passivation layer are dimensioned to mitigate damage to the passivation layer in the corner regions during die singulation.