Chamfered Wiring Gap Pattern Prevents Insulation Film Rupture
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Solution Overview
Problem
The existing interlayer insulation films in integrated circuits tend to rupture during heat treatment due to voids formed at the connection points between narrow trenches and wide open parts in the wiring layer, compromising planarization and leading to structural damage.
Innovation Solution
A chamfered corner part is introduced at the connection point between the gap and open part in the wiring layer pattern, with the end part of the gap widening towards the open part, reducing the likelihood of void formation and rupture during heat treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If a narrow trench is patterned into the wiring layer to form a gap, then the wiring density is improved, but the interlayer insulation film ruptures during heat treatment due to void formation at the connection points between the gap and open parts
Solution Approach 1:
The patent applies local quality by modifying only the corner parts of the wiring pattern where gaps connect to open parts. Specifically, the corner parts are chamfered (cut at an angle) and the gap width is increased at these locations. This localized modification prevents void formation at the critical connection points between narrow trenches and wide open parts, thereby preventing interlayer insulation film rupture during heat treatment, while maintaining high wiring density in the overall pattern.
2Productivity
If the gap width is uniformly narrow throughout to maintain high wiring density, then the wiring integration is improved, but voids form at the connection points between the gap and open parts causing film rupture
Solution Approach 1:
The patent implements local quality by maintaining narrow gap widths throughout most of the wiring pattern to achieve high wiring integration, while locally increasing the gap width at corner parts where gaps connect to open parts. This localized widening prevents void formation and ensures proper film planarization at these critical locations, without compromising the overall wiring density and integration achieved by the predominantly narrow gap design.
Data Source
AI summary
When an integrated circuit having an interlayer insulation film built up on top of a wiring layer is subjected to a heat treatment, it is unlikely that a void formed in the interlayer insulation film will rupture in a portion wherein are connected a narrow gap between wirings and a wide open part contiguous therewith. A corner part of a wiring positioned at a portion where a gap and an open part are connected is chamfered, and an end part of the gap is shaped so as to widen toward the open part. Providing the widening end part in the gap thus mitigates any discontinuity in the built up interlayer insulation film between the gap and the open part. As a result, the interlayer insulation film does not readily seal off an end of a void formed in the gap.