Active Channel Blocking Layer for Contamination-Resistant Transistors
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Solution Overview
Problem
The active channel layer in semiconductor devices is prone to pollution during subsequent manufacturing processes.
Innovation Solution
Incorporating a blocking layer, such as a first and/or second blocking layer, within or over the dielectric layer to prevent gas and impurities from entering the active channel layer during manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the active channel layer is formed early in the manufacturing process, then the manufacturing process can proceed efficiently, but the active channel layer becomes vulnerable to pollution from subsequent processes
Solution Approach 1:
A blocking layer is introduced as an intermediary component between the active channel layer and the subsequent manufacturing processes. This blocking layer acts as a protective barrier that prevents gas and impurities from reaching the active channel layer during later processing steps, while still allowing the manufacturing process to proceed efficiently without requiring complex environmental controls throughout the entire process
2Ease of manufacture
If the active channel layer is exposed during subsequent manufacturing processes, then other components can be formed and connected, but the active channel layer is susceptible to contamination
Solution Approach 1:
The blocking layer is formed in advance, before subsequent manufacturing steps that could cause contamination. This preliminary protective action ensures that when later processes form and connect other components, the active channel layer is already shielded and cannot be contaminated by these subsequent operations
Data Source
AI summary
A semiconductor device includes a FEOL structure and a transistor. The transistor is disposed on the FEOL structure and includes a back gate, an active channel layer, an electrode, a dielectric layer and a first blocking layer. The back gate is disposed on the FEOL structure. The active channel layer is disposed on the back gate. The electrode electrically is connected to the active channel layer. The dielectric layer is disposed over the active channel layer. The first blocking layer is disposed on the dielectric layer and overlaps the active channel layer.