Oxide Semiconductor Channel Contact Composition for Lower Resistance
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Solution Overview
Problem
The challenge in semiconductor devices is to reduce contact resistance between the channel structure and the conductive contact pattern, which affects the reliability of transistors using oxide semiconductor materials, as existing technologies struggle to minimize leakage current and enhance performance.
Innovation Solution
The semiconductor device incorporates a channel structure with a main channel portion made of an oxide semiconductor layer and a channel contact portion with a different composition, both electrically connected to a conductive contact pattern, which reduces contact resistance by using a specific material combination and structural design to improve interface reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a channel structure with uniform oxide semiconductor material is used, then the transistor can be manufactured with simple process, but the contact resistance between channel structure and conductive contact pattern is high
Solution Approach 1:
The channel structure is designed with different compositions in different regions: the main channel portion uses oxide semiconductor material with first composition while the channel contact portion uses oxide semiconductor material with second composition. This local differentiation reduces contact resistance at the contact portion while maintaining the electrical characteristics of the main channel, directly resolving the technical contradiction between reliability and device complexity.
Solution Approach 2:
The invention changes the compositional parameters of the oxide semiconductor material between the main channel portion and channel contact portion. By adjusting the material composition (different ratios of metal elements or different oxide materials), the electrical properties are optimized for each region, specifically reducing contact resistance at the contact interface without compromising the main channel performance.
2Object-generated harmful factors
If oxide semiconductor material is used in the channel layer, then leakage current is reduced, but contact resistance with conductive contact pattern increases
Solution Approach 1:
The channel structure is designed with different compositions in different regions: the main channel portion uses oxide semiconductor material with first composition while the channel contact portion uses oxide semiconductor material with second composition. This local differentiation reduces contact resistance at the contact portion while maintaining the electrical characteristics of the main channel, directly resolving the technical contradiction between reliability and device complexity.
Solution Approach 2:
The invention changes the compositional parameters of the oxide semiconductor material between the main channel portion and channel contact portion. By adjusting the material composition (different ratios of metal elements or different oxide materials), the electrical properties are optimized for each region, specifically reducing contact resistance at the contact interface without compromising the main channel performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces contact resistance and enhances the reliability of semiconductor devices by ensuring a lower interface resistance between the channel structures and conductive contact patterns, thereby improving the overall performance and efficiency of the transistors.
Implementation Method 1
The channel contact portion and the oxide semiconductor layer respectively comprise one or more same elements, and the channel contact portion further comprises at least one dopant, wherein the at least one dopant comprises aluminum (Al), boron (B), arsenic (As), fluorine (F), or hydrogen (H).
Data Source
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Figure 2B
AI summary
A semiconductor device includes an upper conductive line on a substrate, a channel structure adjacent the upper conductive line, a gate dielectric film between the channel structure and the upper conductive line, and a conductive contact pattern electrically connected to the channel structure. The channel structure includes a main channel portion including an oxide semiconductor layer having a first composition, and a channel contact portion between the main channel portion and the conductive contact pattern. The channel contact portion is in contact with the conductive contact pattern and includes a material having a second composition that is different from the first composition.